"For the CMOS sensor, the matrix is volatile high speed transistor as opposed to a capacitor based matrix....with that, e.Digital is capable of delivering the volatile content directly through to a non volatile environment."

Re phrase...

For the CMOS image sensor, the matrix is volatile high speed transistor as opposed to a slower capacitor based matrix, where, both are volatile environments. With that, e.Digital is capable of delivering volatile content of either, directly through to a non volatile environment of trapped electron.

e.Digitals process is patented. If CMOS image sensor developers are implementing a cache sequence directly on the transistor matrix that delivers high speed directly to a trapped electron non volatile environment....IMO, they're cheating. They would have to do that utilizing a data environment similar to e.Digital...bypassing status quo environments.

doni