Six years ago, Intel says...

Intel Labs says it has successfully fabricated an indium-gallium-arsenide field-effect transistor (FET) atop a silicon substrate by integrating a high-k gate stack. As in Intel's advanced silicon transistors, the high-k dielectric allowed the necessary thinning of the gate oxide without increasing gate leakage.

http://www.eetimes.com/document.asp?doc_id=1172569

So, this is not new.

GLTA