"1T-SRAM is a memory technology introduced by MoSys, Inc., which offers a high-density alternative to traditional SRAM in embedded memory applications. Mosys uses a single transistor storage cell (bit cell) like DRAM, but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM (the controller hides all DRAM-specific operations such as precharging and refresh). 1T-SRAM has a standard single-cycle SRAM interface and appears to the surrounding logic just as an SRAM would.

Due to its one-transistor bit cell, 1T-SRAM is smaller than conventional (six-transistor, or “6T”) SRAM, and closer in size and density to embedded DRAM (eDRAM). At the same time, 1T-SRAM has performance comparable to SRAM at multi-megabit densities, uses less power than eDRAM and is manufactured in a standard CMOS logic process like conventional SRAM."

doni