Keep your eye on the quantum dots. The detector results that were announced in April 2016 were very significant and would be something that you would want to integrate not just for the AOC at 850nm but as an imaging array. Which is part of what India wants.

Although not stated in the news release which described the extreme sensitivity of the detector it is no doubt the result of quantum dots that likely make that level of sensitivity possible.

This patent describes how quantum dot structures are deposited within the quantum wells and the resonant cavity.

One of the latest patents issued Apr 4, 2017 “Imaging cell array integrated circuit” is very interesting. It provides for the integration of detection, acquisition and transfer steps for the required readout circuits of the wavelength bands being monitored.

 A semiconductor device comprising: an array of imaging cells, wherein an imaging cell of the array of imaging cells includes an imaging region and a charge storage region 

the imaging cell is adapted to operate in at least one of the following modes: i) a pixel setup mode whereby the n-type modulation doped QW structure of the imaging cell is filled with majority carriers; ii) a signal integration mode whereby the electron photocurrent generated by the first QD-in-QW structure of the imaging region for the imaging cell is transported laterally by the buried QW channel for charge accumulation in the charge storage region; and iii) a readout mode that generates output signals corresponding to the charge accumulated in the charge storage region of the imaging cell in the signal integration mode. 

p-type and n-type modulation doped QW structures and the first and second QD-in-QW structures are disposed within a resonant cavity of the imaging cell that receives the incident electromagnetic radiation. 

The size of the QDs of the QD structures 24 and 28 dictates the wavelength of the electromagnetic radiation absorbed by the QDs and the characteristic absorption wavelengths can be different for the QD structures 24 and 28 for dual wavelength imaging applications as described below. For example, the size of the QDs in the QD-in-QW structure 24 formed above the p-type modulation doped QW structure 20 can be controlled such that the QDs have a maximal characteristic dimension in the range of 70-85 .ANG. with an aspect ratio (i.e., height-to-base ratio) in the range of 1-3, which provides for absorption of wavelengths in the long wavelength (LW) spectrum between 8000 nm and 12000 nm. The size of the QDs in the QD-in-QW structure 28 formed below the n-type modulation doped QW structure 32 can be controlled such that the QDs have a maximal characteristic dimension of 50-70 .ANG. with an aspect ratio (i.e., height-to-base ratio) in the range of 1-3, which provides absorption of wavelengths in the mid-wave infrared (MW) wavelength spectrum between 2000 nm and 8000 nm for use in a dual LW/MW imaging applications.