Yes, it would be nice to read how they did the trick.

My first impression: They did CMOS on GaN, but POET is significantly better!!! Application only for power CMOS!?

POET: hole mobility in the strained InGaAs quantum well: about 1900 cm2/(V·s)
electron mobility 8500 cm2/ (V·s).

silicon: hole mobility 450 and electron mobility 1400 cm2/ (V·s).

Here with this technology on GaN: hole mobility 20 cm2/(V·s) and electron mobility 300 cm2/(V·s) Citations of this article are not available, so we can not see if there is a ref on POET.

And it seems they (HRL) are just in the first stadiu of their work, far away from lab to fab.