Regarding Anadigics,

It's now pretty clear to all us that they only did prototyping of VCSEL as stated in the recent PR from Poet

A previously announced (Anadigics) subsisting manufacturing services agreement was limited to prototype demonstration of VCSELs.

Wavetek is suppose to manufacture address all current manufacturing requirements¸of POET (including VCSEL).

Now anyone can guess what are Poet's all requirements? Could it be that all key elements of POET are ready?

The key elements to be integrated in the POET process, all targeted to be simultaneously available for design, are: • The Optical Thyristor; • Complementary High Electron Mobility Transistors and Heterojunction Bipolar Transistors; and • Dielectric Isolation.

Optical Thyristor

The OT is a central pivotal structure in the development of the POET platform. The OT is a multiple-use, four-terminal device having both optical and electrical inputs and optical and electrical outputs. Depending on application and design, an OT could be a (i) laser, (ii) an optical amplifier, (iii) a photoreceiver, or (iv) have multiple electrical operations, as detailed below. An additional anticipated aspect of the POET OT in development is a process step that allows for emission and reception of light in-plane, parallel to the chip surface. Lasers and photoreceivers may either be designed with vertical emission, or use this step to have in-plane emission. This step would allow on-chip optical interconnections and would also support a low-cost multiple-fiber attachment system that the Company has designed. Various modifications of the basic POET epitaxial structure are being designed to support emission or reception at wavelengths of 980, 1310 or 1550 nanometeres. ODIS’s structure and fabrication also is being developed to provide detection and emission from the 3 to 20 micrometer band via the attributes of its quantum well structure.

OT Lasers

POET lasers are being developed to be a third-generation fabrication that uses an implant confinement technique and improve efficiency and reliability over the proton-confined and oxide-confined devices currently available. Either vertical emission or in-plane emission are anticipated to be employed, depending on design needs. When the in-plane feature is employed, vertical cavity lasers are formed in stripe geometries and have end emission. Such vertical cavity traveling wave lasers have ratios of peripheral length to active area higher than conventional circular vertical-cavity surface-emitting lasers, thus dissipating power more readily and resulting in higher reliability components having longer life. All POET lasers are being developed to be driven by a logic voltage signal, further lowering power requirements and increasing efficiency.

OT Photoreceivers

As photoreceivers, OTs have high sensitivity, are a single stage implementing detection, gain , thresholding and level shifting. No longer required are trans impedance amplifiers, which convert current to voltage to produce usable outputs. Incident light of adequate intensity will produce a direct electrical logic signal. Semiconductor optical amplification provides signal gain and the OT provides the thresholding function. All optical OT structures can be made selectively as transmitters or photoreceivers, further adding to POET integrated circuit flexibility. The in-plane emission feature of POET allows easy connection to on-chip passive waveguides. This waveguide technology design features enlarged waveguide apertures to facilitate ease of coupling to single mode fibers with low device insertion loss. This feature is also part of POET’s low-cost multiple fiber attachment technology via waveguides. We are developing a packaging technology that we anticipate will match this horizontal input/output coupling in order to further maintain the cost-effective approach.

OT Electrical Applications

The POET OT is being developed to also act as an electronic device in memory, digital logic and millimeter-wave oscillator applications. OTs can form single-device static random-access memory cells and can be designed for bistable logic uses. An OT with an optical cavity forms a low-noise voltage controlled oscillator. The ability for OTs to act as comparators is important for high speed analog-to-digital converter designs. The POET platform is targeted to enable manufacturers to develop the internal components required within their product offerings (e.g., handhelds and laptops) to be more reliable, operate faster, and operate with less power and thus longer battery cycles

Transistors

POET-based transistors are designed to suit a wide range of high-performance needs. Electronic designs are expected to be performed using an arbitrary mix of complementary Heterojunction Bipolar Transistors (“HBT”) or complementary High Electron Mobility Transistors (“HEMT”).

Complementary HFET Transistors

The POET process is being designed to offer both p-channel and n-channel HFET devices with complementary threshold voltages. These devices are expected to be usable in both low-noise radio-frequency applications and in high-speed, low power logic applications. Complementary HFET logic has a potential speed-power ratio above that of silicon CMOS, owing to the higher mobility of the InGaAs material, and can form very low power logic running at speeds to over 100 GHz. This flexibility facilitates the integration of dense logic circuitry with low power, high speed and small size, which allows the combined inclusion of analog circuits and logic circuits in an integrated circuit design, resulting in improved system performance.

Complementary HBT Transistors

Complementary HBT devices can amplify high-power, high-frequency signals. HBTs find use in high-frequency power amplifiers such as the ones found in cellular phones. Unlike current GaAs processes, the POET process is being developed to allow fabrication of complementary HBTs. Once implemented, POET platform technology could benefit the consumer by extending battery life and reducing the number of internal components required in a product, thereby reducing its manufacturing cost and increasing product reliability.

Dielectric Isolation

One of the POET design elements anticipated to support effective optoelectronic integration is high-quality dielectric isolation (“DI”). DI “islands” are formed by a deep trench etch through the entire epitaxial structure into the substrate. Under each active “island” is a layer of oxide produced in the process step in which the lower mirrors are formed. The electrical coupling path between such dielectric “islands” is through the oxide of one region, through a semi-insulating substrate, then through the oxide of another island. This DI produces a much higher isolation than the reverse-junction and deep trench isolations of silicon. High-quality isolation is a principal factor in our being able to produce mixed-signal designs such as optoelectronic transceivers. Without this isolation, resulting crosstalk between the more sensitive receive section and the higher-powered transmit section can cause implementation problems. POET DI is being designed to greatly reduce such problems.

Summary All of the POET capabilities described above would allow designers of complex systems and SoC solutions to innovate in ways that have not been possible to date with existing processes. These system integration possibilities would enable lower power solutions and manufacturing costs.

The POET technology would not replace, but supplement CMOS in applications requiring the highest performance, integration and/or lowest power. Our vision is that many foundries would eventually offer POET Technology processes along side of their existing processes to their existing customer base to enable solutions that are not realizable today with any other technologies.

Note : All this of from the 2014 POET Overview :

http://www.poet-technologies.com/docs/POET-Overview.pdf