If number 2 is correct then some thing has gone terrably wrong as its supposed be be 10x what silicon can do at 10nm.
2) that the POET speed at 100 nm is ~10 nm with silicon.
Alright so you can see below. Right off the Poet website that fiveniner is blatently incorrect in his quote.
http://www.poet-technologies.com/the-poet-platform/
Key benefits of the POET platform include:
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Up to 100x speed improvement over CMOS silicon (silicon hits a “power wall” at about 4 GHz that has limited circuit speeds to about 3.2 GHz over the last 10 years)
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10-100x power efficiency improvement over CMOS silicon (depending on application)
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Flexible application that can be applied to virtually any technical application, including memory, digital/mobile, sensor/laser and electro-optical, among many others
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No retrofit or other modifications to existing silicon fabs required – Since POET/PET are CMOS technologies fabricated using standard lithography techniques; they are easily integrated into current semiconductor production facilities extending the profitable utilization of fabrication equipment and production lines that would otherwise be considered at the end of life.
