If number 2 is correct then some thing has gone terrably wrong as its supposed be be 10x what silicon can do at 10nm.

2) that the POET speed at 100 nm is ~10 nm with silicon.

Alright so you can see below. Right off the Poet website that fiveniner is blatently incorrect in his quote.

http://www.poet-technologies.com/the-poet-platform/

Key benefits of the POET platform include:

• Up to 100x speed improvement over CMOS silicon (silicon hits a “power wall” at about 4 GHz that has limited circuit speeds to about 3.2 GHz over the last 10 years)
• 10-100x power efficiency improvement over CMOS silicon (depending on application)
• Flexible application that can be applied to virtually any technical application, including memory, digital/mobile, sensor/laser and electro-optical, among many others
• No retrofit or other modifications to existing silicon fabs required – Since POET/PET are CMOS technologies fabricated using standard lithography techniques; they are easily integrated into current semiconductor production facilities extending the profitable utilization of fabrication equipment and production lines that would otherwise be considered at the end of life.