see link trigate "Figure 1. In the Intel® tri-gate transistor, gates surround the silicon channel on three of four sides."

"Intel has also produced functional tri-gate static RAM (SRAM) cells with a cell read current 1.5 times higher than that of standard planar SRAM cells. By building upward, the tri-gate architecture provides more device width for a given cell footprint compared to the standard planar transistor-thus providing a higher read current because total current is a direct function of the total device width. see link closeup "

How much faster is the write?

Planar transistor(SRAM) is expensive compared to capacitor(cheap DRAM...etc) where a large foot print of working memory is/was need for applications...etc. You going to create that foot print out of SRAM? They haven't yet as far as I know.

For CE, getting rid of that large footprint of working memory is the objective of the industry.

tri-gate static RAM (SRAM) will be how much more expencive? It's claimed to be fast, but it has to interface working RAM memory and storge memory issues that are not on par.

Is there a gain?

doni