MirrorBit® Technology – The Future of Flash Memory is Here Today

MirrorBit technology enables system designers to create highly innovative, high performance, cost-effective products through the use of proprietary charge trapping storage technology.

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MirrorBit Technology At a Glance:

• Highly flexible & adaptable technology
• Optimal Flash memory technology for logic integration
• Scalable to advanced process nodes and higher densities
• Total historic sales in excess of $3.5 billion and quarterly revenues now exceeding $500 million
• Product families optimized for wireless and embedded applications

Fundamentals of MirrorBit Technology

The MirrorBit cell doubles the density of a Flash memory array by storing two physically distinct quantities of charge on opposite sides of a memory cell – a feat made possible by the non-conducting nature of the storage medium. In this two-bit cell, each bit serves as a binary unit of data (either 1 or 0) that is mapped directly to the memory array.

Reading or writing a bit on one side of a memory cell occurs independently of the data that is stored on the opposite side of the cell. Because of its symmetrical memory cell and nonconductive storage element, MirrorBit technology has been engineered to take advantage of a simple, efficient memory array. This array design significantly simplifies a device’s topography and manufacturing process. The end result is a technology that requires 40 percent fewer critical manufacturing steps than floating-gate NOR and consequently provides industry leading price-performance for Flash memory.