''This has the potential to replace DRAMs and flash.''

"RRAM cells are usually two-terminal devices based on perovskite-oxide thin film materials. Resistive switching memories are based on materials whose resistivity can be electrically switched between high and low conductive states. RRAM is becoming of interest for future scaled memories, because of their intrinsic scaling characteristics compared to the charge-based flash devices, and potentially small cell size, enabling dense crossbar RRAM arrays using vertical diode selecting elements."

For e.Digital it does not matter what type of cell structure, what type of material conceptes, or how they manage the charge stay, be it capicator charge, trapped electron, magnatic, crystiline.....or selecting ice cubes for melting and freezing.

It does not matter.....e.Digital will adopt the write/read....overwrite/erase or what ever it takes to manipulate the I/O programing of any memory. They will do it with the same minimal overhead that they implement now on serial or parallel memories.

doni