David Lammers

EE Times

(04/07/2005 4:15 PM EDT)

AUSTN, Texas — Intel Corp. said Thursday (April 7) that it has developed a line of NOR-type flash memory devices optimized for code storage in embedded systems.

Allen Holmes, co-director of product marketing at Intel`s flash products group, said the P30 flash line is based on Intel`s StrataFlash multi-level cell technology, using the company`s 0.13-micron process.

While the P30 series is based on flash product designs aimed originally at the handset market, the products have significant differences, including support for I/O voltages that range from 1.7 to 3.6 Volts, and packaging in the TSOP and ezBGA package types that are not used in the handset market. The chips operate at 1.8 V and have various power-saving features on board, he said.

The P30 products includes on-chip security features, including four pre-defined 128-KByte areas in the main flash array that can be made to be one-time-programmable only.

The embedded flash chips begin shipping this quarter, at densities ranging from 64- to 512-Mbits. A 1-gigabit device will be available in the second half of this year.