interesting article on silicon-on-insulator (SOI) technology for GaN crystal growth:
“We used a standardised manufacturing process for comparing the wafer characteristics. GaN growth on SOI wafers produced a higher crystalline quality layer than on silicon wafers. In addition, the insulating layer in the SOI wafer improves breakdown characteristics, enabling the use of clearly higher voltages in power electronics. Similarly, in high frequency applications, the losses and crosstalk can be reduced”, explains Jori Lemettinen, a doctoral candidate from the Department of Electronics and Nanoengineering.
http://electroiq.com/blog/2017/03/a-soi-wafer-is-a-suitable-substrate-for-gallium-nitride-crystals/
Not implying any any connection, but interesting Ajit's recent talk at IESA Vision Summit in India:
Workshop on Designing with FDSOI technology for IoT products
http://iesaonline.org/vs2017/downloads/vs2017agenda.pdf
So much going on in this industry, fair to say one has to to be intimitely involved to have any hope of keeping up, let alone maintaining even the most basic understanding of things.
Guernsey21
