Low power semiconductor lasers are used in modern communications networks to generate the optical signals that are transmitted over the fiber optic cables that are utilized in these networks. For semiconductor-based lasers, the specific ranges of wavelengths that are produced are linked to the specific families of semiconductor materials that are employed. Indium phosphide and gallium arsenide materials, for example, and the various alloys and stoichiometric composites of these materials, have been widely investigated for the formation of each of the layers within laser diodes fabricated from these materials.

The integration of the optoelectrical device into photonic integrated circuits (PICs) often requires precise placement onto the substrate and the subsequent alignment after placement of optical and electrical features on the die with optical and electrical features on the substrate. The optical facet of a laser die, for example, must be aligned with planar optical waveguides or other optical devices on the substrate to enable effective transfer of the optical signal from the laser to the waveguide or other device. Effective integration of the laser with other devices in optoelectrical or optical circuits on the PIC substrate is essential. An alternative to the alignment of discrete devices is the combination of multiple devices such as the laser and a waveguide, for example, to reduce the quantity of devices that require alignment.

The formation of the integrated device packages that include more than one device and that are compatible with PIC fabrication techniques and methods, and suitable for high-volume production would benefit the art of PIC fabrication. Thus, a need in the art exists for device structures that combine two or more devices, with methods for combining these two or more devices that enable integration in PICs.