FJ, you're gonna like this one.
"The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less."
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10,718,905.PN.&OS=PN/10,718,905&RS=PN/10,718,905
| United States Patent |
10,718,905 |
| Ring , et al. |
July 21, 2020 |
Optical dielectric planar waveguide process
Abstract
A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.
| Inventors: |
Ring; William (High Bridge, NJ), Florjanczyk; Miroslaw (Kanata, CA), Venkatesan; Suresh (Los Gatos, CA) |
| Applicant: |
| Name |
City |
State |
Country |
Type |
POET Technologies, Inc. |
San Jose |
CA |
US |
|
|
| Assignee: |
POET Technologies, Inc. (San Jose, CA) |
| Family ID: |
1000004935270 |
| Appl. No.: |
16/258,292 |
| Filed: |
January 25, 2019 |
