Goeff Taylor is the inventor. It was filed march 6, 2017.
Optoelectronic integrated circuit
Abstract
A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.
| Inventors: |
Taylor; Geoff W. (Mansfield, CT) |
| Applicant: |
| Name |
City |
State |
Country |
Type |
THE UNIVERSITY OF CONNECTICUT
Opel Solar, Inc. |
Farmington
Storrs Mansfield |
CT
CT |
US
US |
|
|
| Assignee: |
THE UNIVERSITY OF CONNECTICUT (Farmington, CT)
Opel Solar, Inc. (Storrs Mansfield, CT) |
| Family ID: |
1000003441092 |
| Appl. No.: |
15/450,400 |
| Filed: |
March 6, 2017 |
