Technical Accomplishments:

The POET platform was moved forwards. The nHFET and the pHFET were realized as a complementary pair and operated as a ring oscillator. It was determined that the pHFET was slow because of the large capacitance between gate and source and a technique using oxygen implants was devised to solve this problem. The devices were scaled to 100nm and it was found that a new contact technique was required to eliminate the short channel effect and the drain induced barrier lowering. Also lift-off had to be eliminated as unsuitable for production. A new metallurgy was devised. The laser was fabricated to operate cw by correcting both top and bottom mirrors and achieving the correct ion implant parameters for current steering. It was found that equal numbers of wells at each interface are necessary to obtain low threshold current. A new approach to the epitaxial structure was devised to enable a translation of the growth to long wavelength and extremely high performance transistors due essentially to high In content channels. Finally the approach to build spot size converters for low insertion loss coupling was determined as well as the fabrication for in-plane resonators and whispering gallery mode resonators.

https://ehb8.gsfc.nasa.gov/sbir/public/documentDownload;jsessionid=uYumTkGrS7hlTxVx9rVlvKF6xEEvYWEcMw5RBKRbOeq7iQMo37MO!579195375?contractNum=NNX12CA19C&severFile=216070_04_24_2014_11_27_49.pdf&proposalId=SBIR_10_P2_104273