If you have time and the interest... Great back grounder.. Go to stockhouse if you wish the photos,breaks, and justification .. Tpower Updated DD Collection DD Collection of "POET Technologies Inc." image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/POETSection_zps074cadab.png User image Business Description: POET Technologies is a semiconductor device and process developer. With its head office in Toronto, Ontario, Canada and its operations office in Storrs, Connecticut, the Company through ODIS Inc., a U.S. Company, designs III-V semiconductor devices for military, industrial and commercial applications, including infrared sensor arrays and ultra-low-power random access memory. POET Technologies has various patents issued and pending in the semiconductor POET process. The POET process enables the monolithic fabrication of integrated circuits containing both electronic and optical elements, with potential high-speed and power-efficient applications in devices such as servers, tablet computers and smartphones. Dr. Geoff Taylor, the Company’s Chief Scientist, and his team have developed the POET technology over the past 24 years funded in part by development grants provided by the US government and military. Dr. Taylor currently conducts research at the University of Connecticut (UConn) in Storrs, CT. The Company has 34 patents issued and 7 patents pending. Contact Info: North American Operations Office: PO Box 555 STORRS-MANSFIELD, CT 06268 USA Phone: (646) 284-9426 (203) 612-2366 Fax: (401) 295-4389 Silicon Valley Office: 2550 Zanker Road San Jose, CA, USA 95131 Canadian Office: Suite 501, 121 Richmond Street West Toronto, Ontario Canada M5H 2K1 Phone: (416) 368-9411 Fax: (416) 861-0749 The Company’s head Canadian office is located in a 1,400-sq. ft. leased office space in Toronto, Ontario, Canada. The Company has its operational office in a 5,996-sq. ft. leased office space in Storrs-Mansfield, Connecticut, on the campus of University of Connecticut (UCONN). We also have access to office space on a month to month basis in San Jose, California. Homepage: http://www.poet-technologies.com/ Contact: poet@taylor-rafferty.com Financial Reporting/Disclosure: Reporting Status: International Reporting: TSX Venture Exchange Company File # on SEDAR & SEDI: "00003983" Dual Listing: OTC Market Tier, OTCQX International SEC Reporting File Number: "000-55135" SIC Code: 3674 CIK number: 0001437424 Fiscal Year End: 12/31 Audited Financials: Audited Latest Annual Report as of Dec 31, 2014: http://www.sedar.com/DisplayCompanyDocuments.do?lang=EN&issuerNo=00003983 Company Financial Reports & Disclosure on OTCQX: http://www.otcmarkets.com/stock/POETF/filings Company News & Disclosure on SEDAR (Canadian SEC equivalent): http://www.sedar.com/DisplayCompanyDocuments.do?lang=EN&issuerNo=00003983 Company News & Disclosure on TSX Venture: http://infoventure.tsx.com/TSXVenture/TSXVentureHttpController?GetPage=CompanyDocuments&PO_ID=1074440&HC_FLAG2=Y&NewsReleases=on&BulletinsMode=on Investment Industry Regulatory Organization (Canadian FINRA equivalent): http://www.iiroc.ca/Pages/default.aspx POET Technologies Inc. on SEC: http://www.sec.gov/cgi-bin/browse-edgar?CIK=0001437424&action=getcompany SoS Delaware Info (Use Entity Search & enter "ODIS" or "OPEL".) https://delecorp.delaware.gov/tin/GINameSearch.jsp POETF (& Old OPELF) on OTCBB: http://www.otcbb.com/asp/dailylist_search.asp?SearchSymbolForm=TRUE&OTCBB=ALL&searchby=symbol&searchfor=OPELF&searchwith=Starting&image1.x=-266&image1.y=-461 Profile Data: SIC - Industry Classification: 3674 - Semiconductors and related devices Incorporated In: Canada Corporation number in Ontario is: "641402" Year of Inc: 2007 Company Officers: Suresh Venkatesan: Chief Executive Officer CEO. Peter Copetti: Executive Co-Chairman. Ajit Manocha: Executive Co-Chairman. Kevin Barnes: Chief Financial Offier. Michel J. LaFrance: Corporate Secretary. Subhash Deshmukh: Chief Operating Officer Daniel DeSimone: Chief Technology Officer Blaine Grisel: Controller. Geoffrey W. Taylor: Director. Chris Tsiofas: Director. Todd A. DeBonis: Director. David E. Lazovsky: Director. John F. O'Donnell: Director. (see more info below) Company Notes: Formerly=OPEL Technologies, Inc. until 7-2013 Formerly=OPEL Solar International, Inc. until 9-2011 Formerly=OPEL International, Inc. until 12-2010 Service Providers: Auditor/Accountant: Auditor, Marcum LLP 750 Third Ave New York, NY, 10017 212-485-5500 http://www.marcumllp.com info@marcumllp.com Legal Counsel & OTCQX Advisor: Pierce Atwood LLP Legal Counsel, DAD/PAL Merrill's Wharf 254 Commercial Street Portland, ME, 04101 207.791.1100 http://www.pierceatwood.com/ REGISTRAR AND TRANSFER AGENT: TMX Equity Transfer Services Suite 400, 200 University Avenue Toronto, Ontario M5H 4H1 Tel: (416) 361-0152 Fax: (416) 361-0470 E-mail: info@equityfinancialtrust.com Investor & Public Relations Firms: Taylor Rafferty: New York 80 Broad Street New York, New York 10004 USA Tel +1 212 889 4350 London 85 Fleet Street London EC4Y 1AE United Kingdom Tel +44 207 614 2916 http://www.taylor-rafferty.com/ info@taylor-rafferty.com http://www.linkedin.com/company/taylor-rafferty Christopher Chu (212) 889-4350 poet@taylor-rafferty.com Transfer Agent: Equity Financial Trust Co 200 University Avenue, Suite 400 Toronto, ONT, M5H 4H1 Toll Free: 1.866.393.4891 T: 416.361.0152 F: 416.361.0470 Email: investor@equityfinancialtrust.com http://equityfinancialtrust.com/corporate-site-map/contact/ * * * * * * * * * * * * * * * * image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/POETF-OTCQXBanner_zpsf24510f4.jpg User image Stock & Trade Information: CUSIP: 73044W104 ISIN: CA73044W1041 The Company’s common shares began trading on the TSXV in Toronto, Ontario, Canada, on June 25, 2007. Canadian Exchanges: Toronto Stock Exchange: (Trades as "PTK" on the TSX.V): http://web.tmxmoney.com/quote.php?qm_symbol=PTK 8 Alternative Trading Systems (ATS) in Canada: http://www.stockwatch.com/Quote/Detail.aspx?symbol=PTK&region=C Chi-X Canada ATS: http://www.chi-xcanada.com/ABOUTUS.aspx CX2 Canada ATS: http://www.chi-xcanada.com/ TMX Select - E Canada ATS: http://tmxselect.org/ Lynx - Y Canada ATS: http://omegaats.com/wordpress000/ Omega - O Canada ATS: http://omegaats.com/wordpress000/ Pure- P Canada ATS: http://www.cnsx.ca/CNSX/PureHomePage.aspx TriAct - M Canada ATS: http://www.triactcanada.com/ Aequitas NEO Exchange: http://aequitasinnovations.com/ Alpha Stock Exchange: http://www.alphatradingsystems.ca/special-security/english?symbol=PTK Alpha has stopped providing info of companies to the general public. This counts for all companies, albeit one can view Alpha trade totals on Stockwatch etc. American Exchange: OTC International: (Trades as "POETF" on the OTCQX) http://www.otcmarkets.com/stock/POETF/company-info European Exchanges: Tradegate Exchange (Trades as RI4 "A1W3GM" in Berlin: http://www.tradegate.de/orderbuch.php?isin=CA73044W1041 Börse Frankfurt: (Trades as RI4.F, WKN "A1W3GM" on XETRA): http://www.boerse-frankfurt.de/en/equities/OPEL+technologies+inc+ag+CA6834881006 Börse Stuttgart: (Trades as RI4.SG, WKN "A1W3GM" on SWB) https://www.boerse-stuttgart.de/rd/en/aktien/factsheet?ID_NOTATION=27976398 Börse Dösseldorf: (Trades as RI4.DU, WKN "A1W3GM" on DUS) http://www.boerse-duesseldorf.de/aktien/wkn/A1W3GM Börse Berlin: (Trades as RI4.BE, WKN "A1W3GM" on Xontro) http://www.boerse-berlin.com/index.php/Shares?isin=CA73044W1041 Börse München: (Trades as RI4.MU, WKN "A1W3GM" on MUN) http://www.boerse-muenchen.de/fuer-anleger/kurse-und-maerkte/aktien/kurs-wertpapierdetails/uebersicht/isin/CA73044W1041/name/POET_TECHS_INC..html All German Exchanges: http://www.finanznachrichten.de/aktienkurse-boersen/poet-technologies-inc.htm Other (Broker) websites depict POET Technologies Inc. as: PTK.V, V.PTK, PTK.C, C.PTK, CN.PTK, PTK.CN, CA.PTK, PTK.CA, PTK.VN, VN.PTK, CVE.PTK ... Trade data: TSX BROKER NUMBERS: http://www.pcquote.ca/tsxidsmay06.pdf Trading volume TSX Venture Exchange: http://web.tmxmoney.com/quote.php?qm_symbol=PTK Total trading volume for ALL above mentioned Exchanges: http://www.finanzen100.de/aktien/poet-technologies-wkn-a1w3gm_H768214924_43856583/kurse.html PTK on TSX Venture site: http://infoventure.tsx.com/TSXVenture/TSXVentureHttpController?GetPage=SecuritySummary&SECURITY_ID=226661&MARKET_ID=CDNX&SEC_SYM_SID=1&HC_FLAG1=checked&HC_FLAG2= Time and Sales for "V.PTK": http://quotes.freerealtime.com/dl/frt/M?IM=quotes&type=Time%26Sales&SA=quotes&symbol=V.PTK&qm_page=46637 Historical Data for POET Technologies Inc. "V.PTK": http://www.stockhouse.com/companies/history/v.ptk/poet-technologies-inc Realtime quotes "POETF" on OTCQX: http://www.otcmarkets.com/stock/POETF/quote Time and Sales for Poet Technologies Inc. Common "POETF": http://quotes.freerealtime.com/dl/frt/M?IM=quotes&type=Time%26Sales&SA=quotes&symbol=POETF&qm_page=63526 Historical Data for Poet Technologies Inc. Common "POETF": http://www.stockhouse.com/companies/history/poetf/opel-technologies-inc-common PTK on Canada Bulls: http://www.canadabulls.com/SignalPage.aspx?lang=en&Ticker=PTK.V PTK.C Technical Analysis: http://www.stockta.com/cgi-bin/analysis.pl?symb=PTK.C "PTK" on Barcharts: http://www.barchart.com/opinions/stocks/PTK.VN "POETF" on Barcharts: http://www.barchart.com/opinions/stocks/POETF Daily Chart "PTK": http://stockcharts.com/h-sc/ui?s=PTK.V&p=D&b=5&g=0&id=p95713176990 Weekly Chart "PTK": http://stockcharts.com/h-sc/ui?s=PTK.V&p=W&yr=1&mn=0&dy=0&id=p98293165943 Daily Chart "POETF": http://stockcharts.com/h-sc/ui?s=POETF&p=D&b=5&g=0&id=p58000482088 Weekly Chart "POETF": http://stockcharts.com/h-sc/ui?s=POETF&p=W&b=5&g=0&id=p08428721682 Short Sales "PTK" & "POETF": http://www.otcmarkets.com/stock/POETF/short-sales Share Structure: Authorized Shares: Unlimited (No abuse in the past) Shares Outstanding ao June 15, 2015: 181,795,928 OS Balance of Warrants June 15, 2015: 16,016,119 OS Balance of Options: June 15, 2015: 33,821,582 Fully Diluted shares: June 15, 2015: 231,918,629 Public Trading Float: June 15, 2015: 169,471,917 My own calculation of the Float as of June 15, 2015: 181,795,928 (OS) - 12,328,011 (Commons of Insiders) = 169,471,917 Balance of the OS a/o Mar 31, 2014: 148,335,985 Balance of the OS a/o Jun 30, 2014: 159,569,759 Balance of the OS a/o Sep 30, 2014: 163,881,884 Balance of the OS a/o Dec 31, 2014: 166,578,084 Balance of the OS a/o Mar 31, 2015: 176,369,884 More information about the Share Structure can be found here: Share Ownership As of March 15, 2015, there were a total of 999 holders of record of our common shares, of which 457 were registered with addresses in the U.S. We believe that the number of beneficial owners is substantially greater than the number of record holders, because a large portion of our common shares are held of record in broker “street names.” As of March 15, 2015, U.S. holders of record held approximately 2.97% of our outstanding common shares. There are 28,374,000 Class A Common Shares of OPEL Solar, Inc. issued and outstanding. There are 5 Common Shares of ODIS Inc. issued and outstanding, held by OPEL Solar, Inc. University of Connecticut owns: 2 Million shares (restricted until May 31, 2016) http://www.newswire.ca/en/story/1311135/tsx-venture-exchange-daily-bulletins Options & Warrants: Balance of Options on 31/03/2014 = 23,557,750 Balance of Options on 30/06/2014 = 23,667,750 Balance of Options on 30/09/2014 = 26,307,750 Balance of Options on 31/12/2014 = 24,237,800 Balance of Options on 31/03/2015 = 24,096,500 Weighted average exercise price of Options: CA$0.51. On June 15, 2015 the maximum number of common shares reserved for issuance under the Options plan increased 36,326,000. Balance of Warrants on 31/03/2014 = 42,578,825 Balance of Warrants on 30/06/2014 = 33,189,539 Balance of Warrants on 30/09/2014 = 32,083,914 Balance of Warrants on 31/12/2014 = 30,782,664 Balance of Warrants on 31/03/2015 = 21,432,163 Weighted average exercise price of Warrants: CA$0.44. (For more details of all the Options and Warrants see the Financial reports on the SEC/SEDAR). During 2014, the Company raised $9,885,981 from the exercise of 19,384,712 warrants and 4,824,950 stock options. Between Jan 1, 2015 & March 15, 2015, the Company raised $5,956,617 from the exercise of 9,450,500 warrants & 271,300 stock options. Insider & Institutional Ownership: - Major Shareholders: Total Institutional Holdings + Management & Directors: Commons Shares held by current insiders of PTI: June 15, 2015: 12,328,011 Options Shares held by current insiders of PTI: June 15, 2015: 22,370,832 Warrant Shares held by current insiders of PTI: June 15, 2015: 1,525,000 Pinetree Capital Ltd (SEDI Identity #00004131) Common shares Pinetree Capital: 11,788,685 Common shares of Richard Patricio: 100,000 Warrants of Pinetree Capital Ltd: 6,275,385 Warrants of Totus Inc (Patricio): 200,000 Warrants of Richard Patricio: 250,000 Total of Pinetree Capital Ltd: 18,064,070 Total of Pinetree & Patricio: 18,614,070 * Pinetree & Patricio are no longer deemed as Insiders (see SEDI). Most likely shares have been sold after their cease date so the above numbers cannot be relied upon! Pinetree & Patricio' holdership are the last reliable numbers on SEDI. Total count is probably lower! Common Shares Sheldon Inwentash: 3,017,000 Common Shares Self Directed RRSP: 6,108,500 Options of Sheldon Inwentash: 600,000 Warrants Self Directed RRSP: 1,500,000 Total Commons of Sheldon Inwentash: 9,125,500 Total Options of Sheldon Inwentash: 600,000 Total Warrants of Sheldon Inwentash: 1,500,000 - Third party Shareholders: Brant Securities: (Position unknown) AlphaNorth Asset Management (Quote; "We do not disclose our portfolio".) William White (IBK Capital) & his wife held 8,883,500 Warrants but according to the 20F filed on the SEC they were exercised in 2014. (IBK Capital bought $520,897 on March 14 & $1,488,000 on April 14, 2014 & on Jan-15 2015 $321,606. Not sure if they still hold.) * IBK Capital & (Accredited) Investors have funded a total of $42,876,635 since inception of the company (see names below): http://www.ibkcapital.com/financings/ (OPEL, Inc, OPEL International Inc, OPEL Technologies Inc & POET Technologies Inc.) ISHARES S&P/TSX VENTURE INDEX FUND: 217,741, (increased from 158,159). http://ca.ishares.com/product_info/fund/overview/XVX.htm Canada Insider, trades of the last 6 months: http://www.canadianinsider.com/node/7?menu_tickersearch=PTK+%7C+POET+Technologies To see All the Company Insiders, go to: https://www.sedi.ca/ Select Language --> Reports --> Click "Access public filings" --> Click on View Summary Reports --> Select "Insider information by issuer" --> Under "Mandatory criteria:" Select "Issuer Number" & Enter 00003983. Click "Search", then "View" to see all the results. PS: Note once Directors cease to be an insider the SEDI reports cannot be relied upon for an accurate reflection of their shares, because they can sell after the cease date and those transactions will never show up in a public reporting database like SEDI. So there is no guarantee that any of the past Directors currently hold the shares that are visible on SEDI. For instance, Mark Benadiba still holds 3,3 mil Options (according to SEDI) yet he exercised 3,250,000 Options in Q3 2014 after he ceased to be an insider. PPS: Also note that the numbers used in this DD collection can be wrong, as they are derived from third party websites. Some numbers stem directly from official financial reports and these are correct, but I tried to calculate all additions to the Share Structure as time passes by and I could have made a mistake, so please verify the numbers of the Share Structure, Insiders etc by your own means! * * * * * * * * * * * * * * * * History and Development of the Company: The legal and commercial name of the Company is POET Technologies Inc. The Company was originally incorporated under the British Columbia Company Act on February 9, 1972 as Tandem Resources Ltd. On November 14, 1985, Tandem Resources Ltd. amalgamated with Stanmar Resources Ltd. and Keezic Resources Ltd., to continue as one company under the name Tandem Resources Ltd. under the British Columbia Company Act. By Articles of Continuance dated January 3, 1997, Tandem Resources Ltd. was continued under the OBCA. By Articles of Amendment dated September 26, 2006, Tandem Resources Ltd. changed its name to OPEL International Inc. By Certificate of Continuance dated January 30, 2007, OPEL International Inc. was continued under the New Brunswick Business Corporations Act. By Articles of Continuance dated November 30, 2010, OPEL International Inc. was continued under the OBCA and changed its name to OPEL Solar International Inc. By Articles of Amendment dated August 25, 2011, OPEL Solar International Inc. changed its name to OPEL Technologies Inc. By Articles of Amendment dated July 23, 2013, OPEL Technologies Inc. changed its name to POET Technologies Inc. The Company has two U.S. subsidiaries, OPEL Solar Inc. (“OPEL Solar”) and ODIS Inc. (“ODIS”). ODIS is a wholly-owned subsidiary of OPEL Solar, which in turn is wholly owned by the Company. image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/POETCompanyStructure_zps4a69126b.png User image * * * * * * * * * * * * * * * * Team POET, Executive Team Members: [/b]Suresh Venkatesan - Chief Executive Officer CEO:[/b] image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/Suresh%20Venkatesan_zpsy7inkhyo.jpg User image Dr. Suresh Venkatesan was most recently Senior Vice President, Technology Development at GLOBALFOUNDRIES and was responsible for the company's Technology Research and Development. Dr. Venkatesan joined GLOBALFOUNDRIES in 2009, where he led the development and ramp of the 28nm node and was instrumental in the technology transfer and qualification of 14nm. In addition, he was responsible for the qualification and ramp up of multiple mainstream value added technology nodes. Dr. Venkatesan is an industry veteran with over 22 years of experience in semiconductor technology development. Prior to joining GLOBALFOUNDRIES, he held various leadership positions with Freescale Semiconductor in Austin, Texas. Dr. Venkatesan holds over 25 US patents, and has co-authored over 50 technical papers. He holds a Bachelor of Technology degree in Electrical Engineering from the Indian Institute of Technology and Master of Science and PhD degrees in Electrical Engineering from Purdue University. Peter Copetti – Executive Co-Chairman: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/PeterCopetti_zpsc400fec1.png User image Peter Copetti has over 25 years of capital markets and management experience in key leadership roles. He has been the chief architect and strategist of the transformation at POET Technologies, since joining the company in June 2012. Mr. Copetti was personally responsible for the restructuring of both secured and unsecured debt, negotiated new equity infusion into the company, and re-focused the company on its original technical vision of monolithic optoelectronic integration, leading to POET’s resurgence as a leading platform innovator in the semiconductor industry. Mr. Copetti is Chairman of the Special Strategic Committee responsible for maximizing the shareholder value of the POET Platform Technology. Ajit Manocha - Executive Co-Chairman image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/AjitManocha_zps81923c52.jpg User image Mr. Manocha has over 35 years of experience in the semiconductor industry with deep knowledge of semiconductor technology and operations. He has worked in all aspects of the business from Research, to Applied Development, to Manufacturing, to worldwide sales to Global Supply Chain & IT, and his most recent role has been as CEO of GlobalFoundries (multi Billion US$ revenue). He has wealth of experience by working in companies like AT&T, Bell Labs/Microelectronics, Philips Semiconductors (now known as NXP), Spansion, and GlobalFoundries. He has managed at various executive levels and successfully led very small organizations with http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/KevinBarnes_zpsc3c57452.jpg User image Mr. Barnes has been serving as Controller since 2007 and has been actively involved in the Financial Statements and Management’s Discussion & Analysis preparation since then. Mr. Barnes is a member of the Institute of the Certified Management Accountants of Australia and an Accredited Chartered Secretary. Mr. Barnes currently serves as a Corporate Controller and Business Performance Manager for one of the world’s largest language training institutes. Prior to this, he was a reporting manager with Duguay and Ringler Corporate Services, a Company specializing in financial reporting for publicly traded Companies. Dr. Geoff Taylor - Director & Chief Scientist: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/UConnprofessorGeoffreyTaylor_zps8cbf8975.jpg User image He is Chief Scientist at POET and has led development of the Planar Optoelectronic Technology (POET) platform over the past two decades, directing a focused team at the ODIS subsidiary of POET. Dr. Taylor possesses an extraordinary technical background made-up of 30 years of design and development experience in electronic and optical device physics, circuit design, opto-electronic technology, materials and applications. He is concurrently a Professor of Electrical Engineering and Photonics at the University of Connecticut and is responsible for ODIS’ development efforts at the gallium arsenide (GaAs) growth and fabrication facility. With over 150 papers in the world’s most respected journals, and dozens of patents, Dr. Taylor is widely regarded as the world's leading authority on GaAs solid-state physics, III-V opto-technology, as well as the pioneer in the development of monolithic integrated optoelectronic circuits. Previously, Dr. Taylor served as a Distinguished Member of the technical staff at AT&T Bell Labs, developing inversion channel technology for III-V materials. At Honeywell and Texas Instruments he helped to develop critical optical technology for the Jupiter Orbital Probe as well as the development of key circuits and devices for very-large-scale-integrated (VLSI) chips. Dr. Taylor holds a Ph.D. in Electrical Engineering and an M.A.Sc. in Electrical Engineering from the University of Toronto and a B.Sc. in Electrical Engineering from Queen’s University. Subhash Deshmukh - Chief Operating Officer: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/Subhash%20Deshmukh_zpsgw22fxdw.jpg User image Dr. Deshmukh has been Vice President of Emerging Technologies and Products at Applied Materials, Inc. (Nasdaq AMAT) . Prior to rejoining Applied Materials, he served as Vice President and General Manager of the Plasma Products Business Unit as well as Vice President of Business Development for Varian Semiconductor Equipment Associates Inc. (Nasdaq VSEA) . Varian Semiconductor was acquired by Applied Materials in November 2011. Before moving to Varian Semiconductor, Dr. Deshmukh served as General Manager of the Dielectric Etch Products Division of Applied Materials. He previously served in a number of executive and management positions with increasing responsibility at Applied Materials, Lam Research, and AMI Semiconductors. Dr. Deshmukh holds a PhD in Chemical Sciences, has authored and co-authored over 55 technical articles and has been granted over 27 patents, with several patents pending. Stephane Gagnon - SVP Operations: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/StephaneGagnon_zps76c8d4f6.jpg User image Mr. Gagnon's day-to-day responsibilities include both operational and reporting functions. He is responsible for reporting to Senior Management on all operational matters and collaborates with executive management in the driving of planning, research and development, milestone execution, procurement of equipment, contract negotiations, business development, and monetization, as well as the optimization of cooperation between internal and external stakeholders such as third party fabs. Mr. Gagnon has over 20 years of experience in the semiconductor, telecommunication and processor industry. Before joining POET Technologies, Stephane's most recent role was Senior Director of Product Management for Integrated Device Technology (IDT) where he drove business strategy for the RapidIO® switching and IP product line. His primary responsibilities included overall strategy and product marketing, in addition to business development and the management of international customers and partner relationships. Mr. Gagnon became involved with the RapidIO Trade Association (RTA) Technical Working Group 13 years ago and has held the position of Chairman of the RTA Steering Committee for over 3 years. Prior to his role at IDT and Tundra Semiconductor Corporation, which was acquired by IDT, Stephane held positions at Motorola and Nortel Networks and holds a BSc in Computer Engineering from Laval University. Daniel DeSimone - VP Product Development: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/DanielDeSimone_zpsbdb1431f.png User image Mr. DeSimone was most recently Senior Manager, Test and Wafer Sort Engineering, at Fairchild Semiconductor. Under his leadership, the Fairchild team achieved significant increases in quality and yield during wafer production in several 0.5 and 0.35 micron CMOS/BiCMOS/BiPolar technologies. In addition to manufacturing experience, Mr DeSimone brings to the Company two distinct experiences: strategic product roadmap definition - addressing server and storage vertical markets; and broad integrated circuit development encompassing analog mixed signal through large digital application specific integrated circuits. Dr. Martin Peisl - Strategic Advisor: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/MartinPeisl_zpsb80a7d15.jpg User image Dr. Martin Peisl has over 33 years of management experience in Semiconductor research, development and marketing. He has served companies such as Siemens, Infineon, Qimonda, Ramaxel, and Netlist. His people and project management background includes broad international experience in Germany, Malaysia, France, China and the U.S. Dr. Peisl was directly responsible for product development of Dynamic Random Access Memory (DRAM) generations from 64Mbit to 1Gbit. Additionally, he has supervised starting new product lines such as Mobile Random Access Memory, Reduced Latency DRAM and DRAM based Application Specific Integrated Circuits (ASICS) . Being a decades long member of the Joint Electron Device Engineering Council (JEDEC) standardization committee, Dr. Peisl has chaired the development of the predecessor of the Double Data Rate 2 (DDR2) specification within the Advanced DRAM Technology (ADT) consortium together with technical members of Intel, Samsung, Hynix, Micron and Elpida. Geoff Rogers - Strategic Advisor: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/GeoffRogers_zps74bafc3c.jpg User image Mr. Rogers has over 30 years of experience in high-performance semiconductors, EDA software, and intellectual property licensing. Having earned a BSEE from Cornell University, Mr. Rogers has held key roles with Tensilica (now Cadence Design Systems, Inc. - NASDAQ CDNS) , Silicon Architects (now Synopsys, Inc. - NASDAQ SNPS) , VLSI Technology (became Philips Semiconductor) and Applied Micro Circuits Corp. - NASDAQ AMCC. Todd A. DeBonis – Director: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/Todd%20A.%20DeBonis_zpszwnae6n5.jpg User image Mr. DeBonis is a veteran semiconductor executive with over 27 years of expertise in sales, marketing and corporate development. For the last decade Mr. DeBonis was the Vice President of Global Sales and Strategic Development at TriQuint Semiconductor. During his tenure TriQuint experienced dramatic growth and recognition in the industry as the technology leader in RF solutions. Mr. DeBonis played an integral part in the recent merger with RFMD and subsequent creation of Qorvo, Inc. Mr. DeBonis previously held the position of Vice President, Worldwide Sales and Marketing at Centillium Communications. Mr. DeBonis also served as the Vice President, Worldwide Sales for Ishoni Networks and Vice President, Sales & Marketing for the Communications Division of Infineon Technologies North America. Mr. DeBonis has a B.S. degree in Electrical Engineering from the University of Nevada. David E. Lazovsky – Director: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/David%20E.%20Lazovsky_zpsbsqfapfs.jpg User image Mr. Lazovsky is the founder of Intermolecular (NASDAQ IMI) and served as the company’s President and Chief Executive Officer and as a member of the board of directors from September 2004 to October 2014. Mr. Lazovsky has an in-depth knowledge of the semiconductor industry, technology and markets. Mr. Lazovsky raised significant amounts of venture capital and other strategic private investments in Intermolecular’s initial public offering. Prior to founding Intermolecular, Mr. Lazovsky held several senior management positions at Applied Materials (NASDAQ AMAT) . From 1996 through August 2004, Mr. Lazovsky held management positions in the Metal Deposition and Thin Films Product Business Group where he was responsible for managing more than $1 billion in Applied Materials’ semiconductor manufacturing equipment business. From 2003 until 2004, Mr. Lazovsky managed key strategic accounts in Business Management where he worked closely with leading integrated circuit manufacturers to ensure Applied Materials was developing and providing cutting-edge technology solutions. From 2002 until 2003, Mr. Lazovsky served as the Technology Program Manager for the Endura 2 Platform, Applied Materials’ flagship 300mm metal deposition platform. From 2000 until 2002, Mr. Lazovsky was based in Grenoble, France and served as Director of Business Management for the European region in the Metal Deposition Product Business Group. Mr. Lazovsky holds a B.S. in mechanical engineering from Ohio University and, as of March 31, 2014, held 41 pending or issued U.S. patents. Mohandas Warrior - Director: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/Mohandas%20Warrior_zpsfipfhurg.jpg User image Mr. Warrior has been president and chief executive officer (CEO) of Alfalight Inc. since February 2004. Alfalight is a GaAs based high power diode laser manufacturing company with headquarters in Madison, Wisconsin. Alfalight serves military, telecom and industrial customers. Mr. Warrior restarted the company in 2004 and established Alfalight as a leading provider of high powered laser diode solutions in both commercial and defense segments. The company successfully sold the commercial business in 2013. Mr. Warrior continues to run the retained defense and security segments of Alfalight which is now focused on providing solid-state laser systems for targeting, tracking and illumination applications to the US military. Under Mr. Warrior's leadership, Alfalight has grown profitably. Prior to joining Alfalight, Mr. Warrior's career included 15 years at Motorola Semiconductors (now Freescale) where he led the test and assembly operations, a group of 3500 employees, in the US, Scotland and Korea. Mr. Warrior earned a BTech in Chemical Engineering from IIT Delhi, an M.S. in Chemical Engineering from Syracuse University and an MBA from the Kellogg School of Management at Northwestern University. Chris Tsiofas - Director: Mr. Tsiofas earned a Bachelor’s of Commerce Degree from the University of Toronto in 1991 and has been a member of the Institute of Chartered Accountants of Ontario since 1993. He is a partner with the Toronto Chartered Accountancy firm of Myers Tsiofas Norheim LLP. Mr. Tsiofas has also been involved as an operating partner in various private enterprises over the years and is able to offer managerial and operational insight. John F. O'Donnell - Director: Mr. O’Donnell earned a BA (Economics) and a LLB and has practiced law in the City of Toronto since 1973. He is currently counsel to Stikeman Keeley Spiegel Pasternack LLP. His practice is primarily in the field of corporate and securities law and, as such, he is and has been counsel to several publicly traded companies. Mr. O’Donnell is currently also a director of RX Gold & Silver Inc. and Nerium Biotechnology Inc. Employees: As of March 15, 2015, the Company had 12 full-time employees and 5 consultants, including senior management; 10 employees and 2 consultants work at our lab facilities either as support staff or are engaged in research and development initiatives; 2 employees and 3 consultants are employed at the Canadian office. None of the Company’s employees are covered by collective bargaining agreements. * * * * * * * * * * * * * * * * POET Business Overview: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/POETSection_zps074cadab.png User image Corporate Overview The Company is a fabless semiconductor company developing a novel semiconductor technology called POET (Planar Optoelectronic Technology) which is anticipated to allow the monolithic fabrication of digital, analog and optical components on a single integrated circuit (“IC” or “die”). Formerly, the Company had been focused on concentrating solar panels and solar tracking technology. In 2012, however, the Company made the strategic decision to divest itself of the solar division, sell all solar-related assets and focus on semiconductor research. The Company is incorporated under the laws of the Province of Ontario and is currently traded on the TSXV. We conduct our research activities primarily through ODIS, our subsidiary. Descriptions of the Company include the operations of both ODIS and OPEL Solar unless otherwise indicated. Key benefits of the integrated POET platform are anticipated to include: (i) faster semiconductor operating frequencies; (ii) decreased need for device cooling; (iii) greater reliability; and (iv) total system cost reductions. With POET’s materials system incorporating periodic table element groups III, IV and V (“Group III-V”), we expect that active optical elements and high-performance electronic elements can be packed in a single IC built around a GaAs wafer at a density similar to that of silicon, the traditional IC material. POET is being developed to be differentiated from competing semiconductor processes such as silicon, GaAs, or indium phosphide, however, by its more comprehensive set of functional capabilities and its ability to integrate them. Unlike existing processes which require the use of multiple chips, circuit boards or sub-systems being linked together by either physical snap connections or multiple cable connections that (i) produce the potential for multiple points of failure, (ii) require more space, increasing the physical end product size and (iii) require greater amounts of power with the attendant production of excess heat, thus demanding additional space for cooling and ventilation, we anticipate that POET will be able to integrate lasers, modulators, photoreceivers and passive optics as well as high-speed, low-power electronics on one monolithically-fabricated die. This would allow POET IC's, when fully developed, to demonstrate a lower cost structure, increased power savings and increased reliability. The Company has 34 patents issued and 7 patents pending for its semiconductor POET platform, which is currently being developed through ODIS. The Company has licensed the intellectual property portfolio developed by our Chief Scientist and Director, Dr. Geoff Taylor, at the University of Connecticut. We believe that our patent and trade secret protection on POET, together with ODIS’s specific design knowledge using POET, will provided us with a large, defensible barrier to outside competition.ODIS Incorporated: http://www.sec.gov/Archives/edgar/data/1437424/000110465914004357/a13-25081_1ex4d11.htm POET Business Overview: http://www.poet-technologies.com/docs/POET-Overview.pdf Corporate Presentation February 2015: http://poet-technologies.com/docs/POET-Technologies-Corporate-Presentation.pdf FORM 20-F filed on the SEC: http://www.sec.gov/Archives/edgar/data/1437424/000110465915027261/a15-8939_120fr12g.htm Optical Interconnection of High Speed Circuits: http://www.poet-technologies.com/wp-content/uploads/2013/07/Optical-Interconntion-of-High-Speed-Circuits.pdf Third Party Valuation of its POET Technology (2011 Redacted): http://www.poet-technologies.com/wp-content/uploads/2011/03/Redacted-ODIS-Intellectual-Property-Appraisal-Report.pdf POET Technologies Announces Completion of a New Valuation Report (2014 Redacted): http://www.stockhouse.com/news/press-releases/2014/08/06/poet-technologies-announces-completion-of-a-new-valuation-report Agreement with BAE Systems Information And Electronic Systems Integration, Inc: http://www.sec.gov/Archives/edgar/data/1437424/000110465914004357/a13-25081_1ex4d2.htm LICENSE AGREEMENT UNIVERSITY OF CONNECTICUT http://www.sec.gov/Archives/edgar/data/1437424/000110465914004357/a13-25081_1ex4d3.htm Uconn Lease to ODIS Inc: http://boardoftrustees.uconn.edu/wp-content/uploads/sites/194/2014/10/Att.-1-C-A-Approval.pdf First Amendment to the Lease Agreement Between The University of Connecticut and ODIS Inc: http://www.sec.gov/Archives/edgar/data/1437424/000110465914004357/a13-25081_1ex4d4.htm CORPORATE GOVERNANCE AND NOMINATING COMMITTEE CHARTER: http://www.poet-technologies.com/wp-content/uploads/2013/07/CGNC-Charter-21May2014.pdf AMENDED AND RESTATED EMPLOYMENT AGREEMENT: http://www.sec.gov/Archives/edgar/data/1437424/000110465914004357/a13-25081_1ex4d7.htm Shareholders Rights Plan Agreement: http://www.poet-technologies.com/wp-content/uploads/2014/06/Draft-Shareholders-Rights-Plan.pdf STOCK OPTION PLAN: http://www.sec.gov/Archives/edgar/data/1437424/000110465914004357/a13-25081_1ex4d13.htm * * * * * * * * * * * * * * * * Research and Development Activities POET Technologies Inc. is the developer of next-generation Gallium Arsenide (“GaAs”) semiconductor device technology called POET (Planar Opto-Electronic Technology). POET is a platform that allows for the integration of optics and electronics on a single chip. This offers a next-generation breakthrough in cost & performance for commercial and consumer products. POET immediately addresses the requirements of numerous military development and procurement programs for sensors, communications and computing. POET Technologies owns 34 patents and has 7 patents pending that protect the IP behind the platform that Dr. Geoffrey Taylor has been developing for over 20 years of research at the University of Connecticut (UConn). The Company is currently conducting research and development for its POET platform, which allows for the construction of semiconductors with the potential to service a wide array of devices. The Company has been awarded more than a dozen U.S. Department of Defense and National Aeronautical and Space Administration’s (“NASA”) Small Business Innovation Research (“SBIR”) grants since 2000, which have supported the initial development of the POET process, infrared sensing technology, sensor/laser development and the combination of electronic circuits and lasers on the same microchip. The Company has made the strategic decision to reduce its dependency on SBIR grants. We remain active, however, in the military sector with projects underway with the U.S. Government, namely NASA and a major U.S. defense contractor, BAE Systems Inc. The Company conducts most of its own research and development activities through its facilities on the campus of the University of Connecticut in Storrs-Mansfield, Connecticut. The Storrs-Mansfield facility is dedicated to semiconductor development. In addition, the Company contracts specific projects with third-party research and development organizations. We have produced working device prototypes in our development laboratories at the University of Connecticut to prove the functionality of the POET process. We are now transitioning the device technology into production of a completely integrated platform, utilizing funds provided by NASA as well as from the Company’s general funds and facilities provided by our development partner, BAE. Throughout the transition process, the Company will continue to use its University of Connecticut research and development facility, or other such laboratory facilities, in our effort to produce scalable commercial product prototypes. We currently expect to produce a functional prototype by June 2014, although no assurances can be given that such project will be completed on a timely basis, if at all. These commercial market prototypes are targeted to demonstrate the Company’s position as a sole source provider meeting specific product application needs and are anticipated to be used to enter the market and obtain initial design wins. Significant Events and Milestones of the past few years: In 2011, all U.S. government contractors, including ODIS, were notified that funding to continue ongoing projects would see dramatic cuts throughout 2011 and possible termination in 2012. ODIS began experiencing such cutbacks in financial support to projects throughout 2011, including our project with BAE, which by the end of 2011 was no longer funded. Recognizing the importance this development effort has to the overall future of the POET project, funds were redirected to continue this project while alternative sources of funding were being sought. In April 2012, we received a Phase II award of $750,000 from NASA to continue developing radiofrequency and optical phased arrays using the POET platform, and work began under this award during the third quarter of 2012. In June 2011, BAE independently produced operational transistors on gallium arsenide wafers, further validating critical components of the POET process. By June 2011, ODIS, under the supervision of Dr. Geoffrey Taylor, had completed several wafers containing multiple devices produced with POET Technology. In August 2011, BAE Systems ran a fabrication lot of five wafers using POET. Chips were produced from these wafers and tested to further validate the varied capabilities and devices developed utilizing the POET platform. ODIS has made significant progress regarding POET as it pertains to its advancements in optical interconnection of high speed circuits, making it possible to implement an optical interface as a single chip to connect existing complementary metal oxide semiconductor (“CMOS”) processors. In December 2012, ODIS successfully produced an integrated laser device, the first Vertical Cavity Laser (“VCL”) utilizing POET, the basis for chip-to-chip interconnection, and complementing other optoelectronic devices already demonstrated by ODIS — including heterostructure field effect transistors (“HFETs”), optical thyristors, pulsed lasers, and super-radiant light emitting devices. In March 2013, the Company achieved radio frequency and microwave operation of both n-channel and p-channel transistors. With this achievement, POET extends the capability of its unique monolithic platform to cover integration of a complete range of wavelength-division multiplexed (“WDM”) capable optoelectronic devices and functions. This is in addition to complimentary electronics based on n-channel and p-channel transistors as either field effect transistors (“FETs”) or bipolar devices. Specifically for this milestone, 3-inch POET wafers fabricated at BAE yielded submicron n-channel and micron-sized p-channel transistors operating at frequencies of 42 GHz and 3 GHz respectively. These operating frequencies are expected to be improved even further with subsequent development. In June 2013, the Company achieved integration of the complementary inverter, the basis for all on-chip logic. Specifically, we successfully demonstrated complementary heterostructure field effect transistor (“HFET”) based inverter operation using the POET process. In October 2013, the Company reported to its shareholders progress on demonstrating a fast-signal switchable laser transmitter for standard optical fibre telecommunications applications. The Company also reported to its shareholders significant progress on fabrication of its optical thyristor-based infrared detector array with its third-party fabrication partner. The Company’s reported progress to shareholders has not been independently verified. (Correction; on Feb 24, 2014 "POET Technologies Announces Integrated Optoelectronic Infrared Device Fabrication and Industrial Foundry Validation). At the same time, the Company reported to its shareholders success in realizing submicron device operation at the 200-nm scale, introducing, in parallel, specific milestones associated with reducing feature size further to the 100-nm range in scale. On January 24, 2014, the Company submitted a registration statement on Form 20-F in connection with the registration of its common stock under the U.S. Securities Exchange Act of 1934. On February 13, 2014, the Company completed a $4,546,000 (CAD $5,000,000) private placement financing. The financing consisted of 7,692,307 units at a price of $0.59 (CAD $0.65) per unit. Each unit comprised one common share and one common share purchase warrant. One warrant allows the holder to acquire one common share of the Company at an exercise price of $0.91 (CAD $1.00) per share for a period of 2 years. No commission was payable with respect to this financing. On February 24, 2014, the Company achieved the fabrication of infrared (IR) detectors, using its proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated electronic and optical devices on a single semiconductor wafer. Adding to its significance is the fact that the POET wafers used for the IR devices were fabricated by an independent foundry, BAE Systems’ Microelectronics Center in Nashua, New Hampshire. On March 4, 2014, the Company achieved the long-awaited milestone (MS-5) – the operation of its switching laser within the POET platform. This achievement has far-reaching implications for on-chip and optical communications applications. This single demonstration is a giant leap forward for an integrated circuit industry looking for ways to push complementary metal-oxide semiconductor (CMOS) processes past some challenging technical barriers. On March 4, 2014, the Company filed new IP portfolio protection documents with the U.S. Patent and Trademark office (USPTO) and in other key jurisdictions to support strategic applications in POET-based quantum computing. On March 4, 2014, the Company announced the addition of Mr. Daniel DeSimone to the POET team as Vice President, Product Development. On April 4, 2014, the Company finalized an agreement with University of Connecticut to convert certain royalty rights into a significant investment in the Company. The parties agreed to restructure the payment provisions of the License Agreement by reducing royalty payments to three percent (3%) of amounts received from unaffiliated third parties in respect of the exploitation of the Intellectual Property defined in the License Agreement, in consideration for 2,000,000 common shares of the Company. On April 7, 2014, the Company reported to its shareholders that the Company had made the POET Technology Design Kit documentation, comprised of a comprehensive device parameter library on the use of the POET platform, available to the industry. This milestone is expected to help licensed designs incorporating POET technology to proliferate. The information is only available under nondisclosure agreements with current and potential partners and customers for the express purpose of evaluation and migration of the POET platform. Each subsequent device demonstrated by POET has been designed to increase the range of procedures in its design kits, increasing the attractiveness of POET for adoption in semiconductor foundry process libraries. Currently the Company is focused on developmental work leading to device fabrication at the 100-nm scale. The 100-nm goal is matched to the state-of-the-art commercial III-V foundry capabilities and is expected to demonstrate a significant speed improvement together with lower power consumption by a factor ranging from 4 to 10 depending on the application as compared to silicon at smaller nodes. On April 28, 2014, the Company announced Taylor Rafferty, LLC as the Company’s Investor relations firm. The change in investor relations counsel follows Christopher Chu rejoining Taylor Rafferty, LLC where he previously assisted leading blue-chip companies in cross-border investor relations campaigns. On June 12, 2014, the Company completed registration of its Form 20-F with the SEC. On July 7, 2014, the Company announced the appointment of Mr. Ajit Manocha to the Board as Executive Vice Chairman. On July 8, 2014 Update on the 100-nm Scaling and Prototype Initiatives: The Company’s 100-nm scaling and prototype initiatives have successfully achieved a culmination point where transition to a third-party foundry is now being negotiated. The 100-nm initiative reduces the feature size of key POET devices down to the 100-nm range. In the course of this program, the technical team developed numerous processes critical to the practical application of POET, which will now form the basis of several new patent applications. The prototype initiative aims to put together several key device building blocks, all with integrated optical and electronic capability, into an integrated circuit (“IC”) or array of ICs. Development of the two initiatives have proceeded in parallel so far, but are technologically linked. Mr. Peter Copetti, Executive Chairman and interim CEO, noted, “We are extremely proud of how far our team has come. We are now at a point where the capabilities of a third-party foundry are required for practical demonstration, as well as subsequent third-party validation. We look forward to proceeding on this basis.” On August 6, 2014, the Company announced the completion of a new valuation model from Pellegrino and Associated LLC. The valuation model indicated a fair market value of the Subject Property in the markets considered at a 90% confidence level to be in between $851 million and $4.3 billion with a mean value of $2.4 billion and a median value of $2.3 billion. The Company does not intend to commission further updates of this valuation. On September 2, 2014, the Company announced a collaboration with Synopsys on advanced modeling of the PET (Planar Electrical Technology) devices and the development of PTI’s first PDK (Process Design Kit). On September 2, 2014, the Company also announced a collaboration with a 3rd party foundry to reproduce and enhance the repeatability of the 100-nm results and shrink the PET process to 40-nm scale. On November 17, 2014, the Company announced the appointment of Ajit Manocha as Co-Chairman of the Board. In 2015, PTI continued to execute on its stated strategic plan. The Company has achieved the following significant milestones in 2015: On February 10, 2015, the Company announced the completion of its “3rd Party Foundry” (BAE Systems) 40/100-nm transfer milestone which consisted of completing the critical layers of the Transistor Fabrication Process. On March 30, 2015, the Company signed an agreement with BAE Systems under which BAE Systems will provide non-exclusive third-party foundry services in support of the Company’s “Lab-to-Fab” transition plan. At present, there has not been any joint process IP development under this agreement, and none is anticipated. On April 8, 2015, the Company announced the appointment of two new Directors: Todd A. DeBonis and David E. Lazovsky. Mr. Debonis was the Vice President of Global Sales and Strategic Development at TriQuint Semiconductor. Mr DeBonis played an integral role in the merger of RFMD and the subsequent creation of Qorvo, Inc. Mr. Debonis was VP Worldwide sales and marketing at Centillium Communications, Ishoni Networks and Infineon Technologies North America. Mr. Lazovsky is the founder of Intermolecular (NASDAQ IMI) and served as President and CEO from 2004 to 2014. Mr. Lazovksy raised significant amounts of venture capital and other strategic private investments in Intermolecular’s initial public offering. Mr. Lazovsky held senior management roles at Applied Materials Inc. (NASDAQ AMAT) from 1995 to 2004. As of March 31, 2014, Mr. Lazovsky held 41 pending or issued U.S. patents. On April 27, 2015, the Company announced the appointment of Dr. Subash Deshmukh as Chief Operating Officer effective June 8, 2015. Dr. Deshmukh has been VP Emerging Technologies and Products at Applied Materials Inc. He was also VP and General Manager of the Plasma products Business Unit as well as VP Business Development for Varian Semiconductor Equipment Associates Inc. (NASDAQ: VSEA). Dr. Deshmukh holds a PhD in Chemical Sciences and has authored or co-authored over 55 technical articles. Dr. Deshmukh has been granted over 27 patents and several patents pending. On June 11th, 2015 POET Technologies announces appointment of Chief Executive Officer (“CEO”) Mr Venkatesan. Dr. Suresh Venkatesan was most recently Senior Vice President, Technology Development at GLOBALFOUNDRIES and was responsible for the company’s Technology Research and Development. Dr. Venkatesan joined GLOBALFOUNDRIES in 2009, where he led the development and ramp of the 28nm node and was instrumental in the technology transfer and qualification of 14nm. In addition, he was responsible for the qualification and ramp up of multiple mainstream value added technology nodes. Dr. Venkatesan is an industry veteran with over 22 years of experience in semiconductor technology development. Prior to joining GLOBALFOUNDRIES, he held various leadership positions with Freescale Semiconductor in Austin, Texas. Dr. Venkatesan holds over 25 US patents, and has co-authored over 50 technical papers. He holds a Bachelor of Technology degree in Electrical Engineering from the Indian Institute of Technology and Master of Science and PhD degrees in Electrical Engineering from Purdue University. * * * * * * * * * * * * * * * * POET Technology: POET is based on a novel Group III-V materials structure that is anticipated to provide an optoelectronic mixed-signal process that can integrate high-performance analog and digital electronics with high-performance active optical elements. We believe that POET IC's will enable integration of a dense mix of active optical elements and optical waveguides together with logic and mixed-signal elements on a single chip, in one serial fabrication process. What Does “POET” Mean? What Does “PET” Mean? • “POET” = “Planar Opto-Electronic Technology”. • POET is a revolutionary Gallium Arsenide (GaAs) process used to build electrical, optical, and electro-optical integrated circuits. • Supports a full range of electrical and optical active and passive circuit components. • Very high performance versus existing silicon (up to 100x faster). • Very low power consumption versus existing silicon (up to 95% less). • Much more versatile than legacy compound semiconductor processes (GaAs, InP, others). • Can be manufactured using existing CMOS chip making equipment. • Fully compatible with existing semiconductor design and manufacturing flows. • Will allow unprecedented integration into a single chip of functions that take entire chipsets today for large component cost reduction, and (particularly for optics) tremendous (e.g. 80%) reduction in assembly and test costs. • "PET“ = Planar Electronic Technology”. • PET is the electrical subset of the full POET process. • Can support CMOS, Bi-CMOS, and Bipolar device fabrication. • Offers lower cost, simpler process/fab options for applications that don’t require optical feature set. POET Overview: POET's new and patented semiconductor fabrication process, POET (Planar Optoelectronic Technology), is based on a unique Group III-V materials structure. The POET materials structure is a four-layer, PNPN, electrical structure having two sets of independent quantum wells, and is specifically designed to support both active optical elements (laser, photoreceiver), and high-speed complementary HEMT and HBT transistors. This materials structure is realized as an epitaxy grown on a semi-insulating GaAs wafer. The processing of these wafers into products is done using a series of steps similar to those used in silicon processing, and is scalable to deep submicron feature sizes. POET device yield will thus be similar to that of silicon, much higher than that characteristic of many current III-V processes. This gives POET a technology basis that is uniquely powerful, that is economical to produce, and that is extensible in generations. Capitalizing on POET capabilities, POET will offer products into the communications, optoelectronic, RF/wireless, sensor, and imaging markets. POET is a uniquely-powerful mixed-signal process, integrating high-performance analog and digital electronics with high-performance active optical elements. POET IC's integrate a dense mix of active optical elements and optical waveguides together with logic and mixed-signal elements on a single chip, thus manufactured in one serial process. The key elements integrated in the process, all simultaneously available for design, are: The Optical Thyristor (OT), Complementary HEMT and HBT devices, and Di-electric-Isolation. Optical Thyristor: The Optical Thyristor is a multiple-use device, and is the backbone of POET. The OT is a four-terminal device having both optical and electrical inputs and optical and electrical outputs. Depending on application and design, an OT can be a laser, optical amplifier, or photoreceiver, or may execute various electrical operations. An additional aspect of the POET OT is a process step that allows for emission and reception of light in-plane, parallel to the chip surface. Lasers and photoreceivers may either be designed with vertical emission, or use this step to have in-plane emission. This step allows on-chip optical interconnections, and also supports a low-cost multiple-fiber attachment system that POET has designed.Various modifications of the basic POET epitaxial structure will support emission or reception at wavelengths of 980, 1310, or 1550 nm. POET's innovative structure and fabrication also provides detection and emission from the 3 to 20 m m band via the unique attributes of its quantum well structure. OT Lasers: POET lasers are of a third-generation fabrication using an implant confinement technique and have improved efficiency and reliability over the proton-confined and oxide-confined devices currently available. Either vertical emission, or in-plane emission may be employed, depending on design needs. When the in-plane feature is employed, vertical cavity lasers are formed in stripe geometries, and have end emission. Such vertical cavity traveling wave lasers have ratios of peripheral length to active area much higher than conventional circular VCSELs, dissipating power more readily, and resulting in higher reliability components of longer life. All POET lasers can be driven by a logic voltage signal, further lowering power requirements and increasing efficiency. Wall plug efficiency will exceed 50%. OT Photoreceivers: As photoreceivers, OTs have high sensitivity, are self-contained, and do not require TIAs (TransImpedance Amplifiers) to produce usable outputs. Incident light of adequate intensity will produce a direct electrical logic signal. Analog amplification and thresholding is not required in POET OT photoreceivers. All optical OT structures can be made selectively as lasers or photoreceivers, further adding to POET IC flexibility. The in-plane emission feature of POET allows easy connection to on-chip passive waveguides. This waveguide technology features enlarged waveguide apertures to facilitate ease of coupling to single mode fibers with very low device insertion loss. This feature is also key to POET's low-cost multiple fiber attachment technology via waveguides. POET has devised a packaging technology to match this horizontal I/O coupling, further maintaining the cost-effective approach. OT Electrical Applications: The optical thyristor can also act as an electronic device in storage, logic and millimeter-wave oscillator applications. OTs can form single-device static RAM cells, and can be designed for bistable logic uses (flip-flops). An OT with an optical cavity forms a uniquely low-noise voltage controlled oscillator. OTs acting as comparators are the heart of our ultra high speed A/D converter designs. POET Transistors: POET transistors suit a wide range of high-performance needs. Electronic designs can be performed using an arbitrary mix of complementary Heterojunction Bipolar Transistors (HBT), or unique complimentary High Electron Mobility Transistors (CHEMT). Complementary HEMT Transistors: The POET process offers both p-channel and n-channel HEMT devices with complementary threshold voltages. These devices are usable in both low-noise RF applications and in very high-speed low power logic. Complementary HEMT logic has a speed-power ratio similar to that of silicon CMOS, owing to the higher mobility of the HEMT structure, and can form very low power logic running at speeds to over 100 GHz. This allows the integration of dense logic circuitry with low power, high speed, and small size. This allows any mix of analog circuits and logic circuits to be included in an IC, design, when such integration can improve system performance. Complementary HBT Transistors: Complementary HBT devices operate in various analog and RF applications into the Terahertz range. Dielectric Isolation: One of the POET design elements supporting effective optoelectronic integration is its high-quality dielectric isolation. DI "islands" are formed by deep trench etch through the entire epitaxial structure into the substrate. Under each active "island" is a layer of oxide produced in the process step in which the lower mirrors are formed. The electrical coupling path between such dielectric "islands" is through the oxide of one region, through a semi-insulating substrate, then through the oxide of another island. This DI produces a much higher isolation than the reverse-junction and deep trench isolations of silicon, and is essentially a free product of the POET process. This high-quality isolation is a principal factor in our being able to produce mixed -signal designs such as optoelectronic transceivers. Without this isolation, a typical implementation problem is a resulting crosstalk between the more sensitive receive section and the higher-powered transmit section. POET DI greatly reduces such a problem and allows POET to produce such integrated designs. POET-Based IC designs: POET integrated circuits contain combinations of optical and electronic devices designed to meet specific application, and are manufactured in the POET process. Designs are all fabricated using the same POET process, then tested, optically and electrically, as one single manufactured unit, minimizing cost. All of the elements of OT lasers, OT photoreceivers, OT logic circuits, optical interconnect, HBT transistors, HEMT transistors and dielectric isolation are useable in any number and combination, as the design requires, just as in any other semiconductor process. This makes POET far and away the most powerful, versatile optoelectronic mixed signal process in existence. * * * * * * * * * * * * * * * * POET’s benefits are analogous to the benefits of the first silicon integrated circuits: • Eliminate connectors, solder joints, assembly and multiple packaging steps. • Decrease size, cost, complexity and power. • Increase performance and reliability. • Create a path for future improvements and scaling. • Board-to-board, chip-to-chip optics with low-cost integrated transceivers. • Substantial increase in chip I/O bandwidth with reduced power using integrated wavelength division multiplexing. • A higher speed and lower power complementary metal-oxide semiconductor (CMOS) with integrated serializer/deserializer & clock data recovery (SERDES & CDR). • Novel high-density universal memory, Optical RF generation, RF photonic filtering, Optoelectronic low-jitter clock generation and on-chip optical distribution, OE computing and new architectures based on O&E combinations (e.g. quantum computing). 3rd Party Independent Validation of POET: • POET Technologies partners with an international defense services company that is a global leader in military electronic systems design, development, manufacturing and integration. • Funded by AFRL, POET entered into a contract with 3rd party partner in 2008 with the intent of replicating a specific POET device in a 3rd party MIL Spec. environment. • The 3rd party partner has world-class GaAs research facilities and has numerous PhD researchers working on the continued development of POET. • POET’s partnership has successfully reproduced the POET technology as published, by producing and testing the critical electrical elements of POET Platform sub-process steps for transistors. (see more in the "Third Party Valuation of its POET Technology" pdf.) Ready At The Right Time: CMOS Silicon Evolution Is Ending! • Moore’s Law era 1960-2015? • CPU/GPU execution unit speeds haven’t improved in over 10 years. • Industry looking for new technology path. • Packaging Techniques Have Not Improved OE Transceiver Cost. • Various hybrid integration techniques like 2.5/3 D packaging, silicon photonics have not led to improved Opto-Electronic Transceiver costs. • Single-chip transceivers needed for fiber to fully replace copper for system interconnect applications. • Copper Cable Era For System Interconnect Is Ending. • 1 Gigabit Ethernet system interconnect was and is mostly copper-based. • 10 Gigabit Ethernet system interconnect was and is almost entirely fiber-based. • Optical Systems Need More Lithography, Less Mechanical Assembly. • Many optical systems that need aligned arrays of sensors and/or lasers cannot be built today due to mechanical assembly cost constraints. • POET offers this alignment capability by means of lithography, dramatically lowering the cost of these products (IR sensors, holographic displays, etc.). Applications: • POET’s technology can surpass speed limits of widely used CMOS silicon chips and is much better positioned for stacking multiple chips to increase performance. • A functional POET device may reduce the power consumption of laptops, tablets, smartphones, servers, and/or other electronic devices by 80%. • Leads to drastic reduction in device size and battery power consumption. • Power reduction in commercial-scale server farms represents tremendous cost savings to companies like IBM, Google and Intel. • In November 2011, Hewlett Packard announced that it is working with numerous chip manufacturers to create ultra efficient, low-energy servers aimed at companies running large scale remote computing operations such as Twitter and Facebook.• POET can also produce an infrared sensor for use in air, sea, ground, and space with sensitivity that is an order of magnitude higher than existing technology. Commercial Applications: • CPU. • Memory. • CMOS. • Servers. • Processor to Processor Optical Interconnect. Communication Applications: • Smart Phones. • Network (Cell Towers, LANs, MANs). • Fiber to the Home (FTTH). Defense Applications: • Infrared Sensors (Uncooled – SWIR, MWIR, LWIR). Integrated photonics and electronics for: • Radar and Lidar. • Communications. • Displays. • Hardened computers and memory. • Microwave and millimetre wave power sources. Other Applications: • Active Optical Cables. • Coherent laser arrays for pumps, industrial applications. • Commercial UV/VIS/NIR cameras. • Medical Imaging Devices. Complementary Technologies: 2.5 D Packaging: • Refers to die-stacking where multiple chips are put in a single package; often used for memory devices. 3 D Packaging: • Refers to true multiple-chip packaging where devices can be assembled in any orientation to one another in the vertical or horizontal plane. Silicon Photonics: • Typically involves a passive silicon substrate providing optical (and often electrical) interconnect between separate active devices attached to it. Coherent Optics: • Module-level tunable integrated optical circuits for DWDM optical networking applications. Four Examples of POET Value: - CMOS Silicon: • Final CMOS Si geometry (10/11 nm) is under development now; first production 2015? • POET/PET offer about 100x speed improvement over CMOS silicon. • POET/PET offer 10-100x power efficiency improvement over CMOS silicon. - OE Conversion: • As example, current 10 Gigabit Ethernet transceivers use about 10 individually packaged ICs on a substrate in a die-cast housing; POET can reduce this to 1 individually packaged IC. • Depending on application, POET can reduce overall OE transceiver cost by 60 to 90%. - Memory and Storage: • Current memory types include dedicated SRAM, DRAM, and NVRAM devices. • POET/PET memory cell can concurrently support all three memory types. • Massive simplification at system level due to elimination of NVRAM backup/recovery. • Much lower bit error rates than silicon-based memories (several orders of magnitude). Sensors and Weapons: • POET provides low-cost optical thyristor arrays that can be used as dual-mode sensor/laser arrays (same panel can find targets and destroy them). • Main reason US Government funded research for so long (19 years and counting). * * * * * * * * * * * * * * * * SBIR Awards: NASA, Department of Defense: US Air Force, US Navy, Missile Defense Agency: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/NASASBIR_zps6899cb78.jpg User image Links on the NASA website to SBIR's: http://sbir.nasa.gov/sbirweb/search.jsp?q=ODIS&image.x=0&image.y=0&image=Search&site=Website&client=sbir_frontend&proxystylesheet=sbir_frontend&output=xml_no_dtd&fromSearch=Y NASA SBIR (2010) Solicitation: Optoelectronic Infrastructure for RF/Optical Phased Arrays: http://sbir.gsfc.nasa.gov/SBIR/abstracts/10/sbir/phase2/SBIR-10-2-O1.01-9727.html?solicitationId=SBIR_10_P2 NASA SBIR: Optoelectronic Infrastructure for RF/Optical Phased Arrays. (TRL end of contract 5): http://sbir.gsfc.nasa.gov/SBIR/abstracts/10/sbir/phase2/SBIR-10-2-O1.01-9727.html?solicitationId=SBIR_10_P2 NASA SBIR: Optoelectronic Infrastructure for RF/Optical Phased Arrays. (TRL end of contract 7): http://sbir.gsfc.nasa.gov/SBIR/abstracts/10/sbir/phase2/SBIR-10-2-O1.01-9727.html?solicitationId=SBIR_10_P2 NASA SBIR Optoelectronic Infrastructure for RF/Optical Phased Arrays (Award details Phase 1): http://sbir.gsfc.nasa.gov/SBIR/abstracts/10/sbir/phase2/SBIR-10-2-O1.01-9727.html NASA SBIR Optoelectronic Infrastructure for RF/Optical Phased Arrays (Award details Phase 2): http://sbir.gsfc.nasa.gov/SBIR/abstracts/10/sbir/phase1/SBIR-10-1-O1.01-9727.html * * * * * * * * * * * * * * * * image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/DoDSBIR_zpsd55a3b56.png User image Department of Defense: SBIR Research Centre: http://www.dodsbir.net/selections/ List of SBIR Awards for the Department of Defense for ODIS: http://www.sbir.gov/sbirsearch/detail/254696 These are the SBIR's & STTR's that POET received before they were a publicly traded company: http://www.sbir.gov/sbirsearch/detail/256466 Department of Defense, US Navy SBIR (2010) Phase 1: Integrated Optoelectronics for Optical CDMA: http://www.navysbir.com/10_2/244.htm Department of Defense, Missile Defense Agency SBIR (2008) P1: Photonic control technology for Phased Arrays: http://www.sbir.gov/sbirsearch/detail/254701 * * * * * * * * * * * * * * * * image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/0c44cd7f-9be3-4bb5-b876-94bf2c68d7d1_zpscf89a8b7.jpg User image List of SBIR's for the Department of Defense, US Air Force: http://www.afsbirsttr.com/TechSearch/Default.aspx?kwa=odis Department of Defense, US Air Force SBIR (2008) Phase 1: An Optically Switched Thyristor as a Thz pulse Source: http://www.sbir.gov/sbirsearch/detail/254699 Department of Defense, US Air Force SBIR (2009) Phase 1: Thyristor-HFET logic based on optical signal transfer: http://www.sbir.gov/sbirsearch/detail/254705 USAF (2009) Complete P1 Invited P2: Integrated wide-bandgap semiconductor photoconductive switch with a terahertz antenna: http://www.afsbirsttr.com/award/AwardDetails.aspx?pk=15165 Department of Defense, US Air Force SBIR (2009) Phase 2 Final: High Frequency Optoelectronic Oscillator: http://www.afsbirsttr.com/Include/Report/SummaryReport.aspx?pk=91340E9D-38E3-4A8D-A73C-5BFE4EBD509C&type=TechMall Department of Defense, US Air Force SBIR (2009): High Bandwidth Optoelectronic Data Interfaces for Satellites: http://www.afsbirsttr.com/Include/Report/SummaryReport.aspx?pk=EFB9CC2D-06D2-4655-B11F-18F5A1B356B4&type=TechMall Department of Defense, US Air Force SBIR 2009 Phase 1: Optoelectronic directional couplers for optical switching fabrics: http://www.afsbirsttr.com/Include/Report/SummaryReport.aspx?pk=54FE8547-B006-4A9D-B15E-7349BC5942F6&type=TechMall Department of Defense, US Air Force SBIR 2010 Phase 2: Optoelectronic Directional Couplers for Optical Switching Fabrics: http://www.afsbirsttr.com/Include/Report/SummaryReport.aspx?pk=57CD1CEF-D3A8-4713-B2A3-52F5617BE3B5&type=TechMall Department of Defense, US Air Force SBIR 2010 Phase 2: Monolithic InfraRed pixel structures enabled by Thyristor-HFET EO logic: http://www.sbir.gov/sbirsearch/detail/8151 Department of Defense, US Air Force SBIR (2010) Phase 1: An Optoelectronic Ultra Low Power RAM: http://www.afsbirsttr.com/Include/Report/SummaryReport.aspx?pk=B87DCBB3-6910-4774-AE41-3EF24F72D4EC&type=TechMall * * * * * * * * * * * * * * * * image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/SBIRSTIR_zps6314cd51.png User image Technology Readiness Levels Demystified: http://www.nasa.gov/topics/aeronautics/features/trl_demystified.html ODIS was one of only 10 companies selected for the CPP: http://www.acq.osd.mil/osbp/sbir/docs/FY08-SBIR-Commercialization-Pilot-Program-Report-to-Congress.pdf US Department of Defense, Small Business Innovation Research Program (SBIR) & Commercialization Pilot Program (CCP): http://www.acq.osd.mil/osbp/sbir/docs/FY08-SBIR-Commercialization-Pilot-Program-Report-to-Congress.pdf Government Contracts Awarded to POET: http://www.governmentcontractswon.com/department/defense/OPEL_inc_005862623.asp?yr=10 POET Platform to Develop Optoelectronic Infrastructure for NASA & Optical Code Division Multiple Access (OCDMA) Technology; http://satellite.tmcnet.com/topics/satellite/articles/136636-odis-poet-platform-develop-optoelectronic-infrastructure-nasa.htm ODIS Gets Green Light From the Navy & Receives a Development Contract: http://www.techzone360.com/news/2010/09/10/5000290.htm * * * * * * * * * * * * * * * * Audio clips of POET Presentation in Toronto: POET Presentation Part 1: http://tinyurl.com/pxe8elq POET Presentation Part 2: http://tinyurl.com/ph9s3ec POET Presentation Part 3: http://tinyurl.com/poeygee * * * * * * * * * * * * * * * * Markets and Products: The overall semiconductor market has been projected to grow to $550 billion by 2015 and remains a rapidly growing segment of our economy. Current research and development spending by semiconductor companies has grown to a record-high $53.0 billion, or an equivalent of 16.7% of total semiconductor sales, its highest level in 4-5 years (IC Insights 2014). Electronics, with sales topping $1,200 billion, generally require semiconductors to achieve success and competitive performance. Progress in the electronics industry over the past four decades has both driven and been driven by the industry’s ability to create and serve markets with faster, cheaper and smaller monolithic IC's. Each product advance in turn becomes the driver for the next wave of IC technology. Many new generations of IC technology have increased IC capabilities and thus those of the products in which they serve. Advances in personal computers, communications and many consumer devices have been powered by this continual development in semiconductor technology. Through 2017, the convergence of internet-capable and mobile technologies will drive the strength of the semiconductor device market. Today however, the traditional semiconductor paradigms may be falling short. Silicon IC's are not well suited to serve in the arenas of optoelectronics and very high-speed mixed-signal circuits, and currently no adequate monolithic (single-chip) technology exists. Today’s implementations in these markets are not fully benefiting from the cost savings of integrated technologies, but rather are based in part on hybrid or multi-component approaches. In the hybrid approach, multiple individual semiconductor components incorporating multiple technologies are interconnected to form circuits satisfying the needs of a particular application. This approach is used successfully to bring solutions to limited-size markets, particularly those in which performance is at a premium, despite a higher price. As the need for high-speed services spreads and higher-volume markets continue to emerge, however, this hybrid approach to implementation adds expense. Hybrid technology may be able to serve the limited-size markets that are able to tolerate higher price tags, but such technology cannot serve truly large, competitive markets. Today’s semiconductor industry is typically seen as dominated by silicon products, with the silicon IC industry then being divided into (i) the personal computer and memory segment and (ii) the fabless IC segment. The fabless segment is then split into a triad of separate industries providing (i) design tools, (ii) IC designs and (iii) IC fabrication, all operating independently but synergistically. While this is a good description of the silicon portion of the semiconductor industry, it is not a model of the whole semiconductor industry. Left unaddressed are markets for analog, mixed-signal, radio frequency and optical products that are currently served by a combination of non-silicon technologies, including silicon-germanium, GaAs, indium phosphide and gallium nitride, which collectively cover a variety of applications, some of which are described below. Compared to existing technologies, POET is expected to be more versatile, meaning that POET can potentially be utilized to manufacture many more device types that could require the implementation of on-board optics or radio frequency electronics. The Company’s POET platform is being developed to apply in a large portion of this budding semiconductor market as it represents a potential solution to increasing semiconductor performance in an economical and functional manner. Once developed, the Company’s GaAs-based chip design processes could have several potential major market applications, including: (i) infrared sensor arrays for military as well as Homeland Security monitoring and imaging and (ii) microchips combining optical lasers and electronic control circuits for potential use in various military programs and telecom applications, including within fiber to the home technology. In the short term, POET’s current development efforts may allow future licensees to address opportunities in the following markets (IC Insights 2014, Gartner 2014). - IPad, Tablet and Cloud OS-type PC devices—Demand continues to surge for tablet-class and phablet-class devices, and the market for PC's built on cloud-based services, such as Chromebooks, is beginning to heat up. One example of device key to this market, DRAM, is projected at a $35.0 billion market in 2015; logic at $115 billion. · Smartphones—Semiconductor content of this fast-growing segment represents approximately 31% of the average selling price, compared to 23% for ordinary cellphones. 3G/4G smartphones are set to impact on the future analog, DSP, logic, and NAND flash memory IC markets. The mobile phone semiconductor market alone is projected $64.1 billion for 2015. · Digital and Smart TV's-Streaming capability via the Internet will be the must-have technology in 2014; this points to increased revenues for LED drivers, power management IC's, and MCU's/MPU's. MPU's/CPU's are forecast at $92.6 billion for 2015. · Smart Grids and Advanced Metering Infrastructure (AMI)— Residential appliances and related electrical systems are now being designed for interaction with power utilities via the Internet and local networks. Smart grid technology investment is forecast to grow 19% annually through 2016. · “Internet of Things”— The identification, monitoring, and control of objects with an addressable Internet protocol has been gaining momentum for over a decade with no abatement. The sensor and actuator semiconductor market, one of the areas impacted by this sector, is projected at $14.1 billion. The Company’s strategy is to continue aggressive research and development efforts directed toward the completion of the POET platform. Upon completion of development, the Company anticipates that POET could compete in the following broad markets. Military POET’s technology platform for optoelectronic integration is designed to exploit the optoelectronic and electronic behaviors of GaAs semiconductor material. One of the benefits of this material, from a space electronics perspective, is that GaAs is significantly less susceptible to x-ray and gamma-ray total integrated dose radiation. GaAs has been a long-standing choice for high-frequency devices and circuits, though GaAs digital devices do not provide the performance that metal oxide semiconductor field effect transistor devices provide. Currently, the POET platform is being utilized within a NASA deep space probe initiative. Important to military applications are the electronic devices that can be integrated into the POET design architecture, including both complementary heterostructure field effect transistors and complementary HBT's. These transistors will enable both analog and digital functions in POET hybrid optoelectronic devices. The technology also provides a number of key, integrable opto-electronic devices: resonant vertical cavity lasers, detectors, amplifiers and modulators for out-of-plane operation. In addition, a novel innovation enables in-plane waveguide and traveling wave operation for lasers, detectors, modulators, amplifiers and directional coupler switches. Important to the military is POET’s potential to integrate digital, radio frequency and optical technologies in a single device, which is designed to satisfy the documented high-performance capability needs for multiple space systems of all military departments and agency technology areas. POET’s architecture, which incorporates a dense mix of active optical elements and optical waveguides together with logic and mixed signal elements, is designed to enable a wide variety of space-system components including 40 GB/s polarization diversity receivers, radiation hardened digital signal processor chips, 1 THz transmitters and receivers, 40 GB/s optical transponders and ultraviolet, visible and infrared imaging. These components, when developed, could be combined to enable a number of applications including high speed transceivers for laser communications, radio frequency transceivers, radiofrequency and optical phased arrays, optoelectronic interconnects, analog-to-digital and digital-to-analog converters, uncooled visible, mid-wavelength infrared and long-wave infrared imagers, optical memory, opto-electronic and radio frequency apertures, ultra-wide-band sources and receivers, low-light-level sensors, single photon counters and optical correlators. Using inter-sub-band absorption for the ultraviolet, infrared and visible light detector, POET could have the ability to offer a low-cost monolithic solution to multi-spectral imaging. The compact array could provide: (i) detection, readout and analog-to-digital conversion on a single chip; (ii) a common axis for ultraviolet, visible and infrared imaging; (iii) wavelength scanning; and (iv) 300K operation with no cooling required. The Space Situational Awareness Tech Area (“SSA”) has indicated that this technology addresses SSA sensor requirements by providing required capability with significantly reduced size, weight and power. In addition, the Air Force Communications Command and Control Division (“C3”) Tech Area Plan identifies mid- and long-term space communication and C3 technology challenges that require the photonic applications that POET is designed to provide. After testing, the Air Force Commercialization Pilot Program (“CPP”) selected POET’s ultraviolet/infrared/visible imaging technology project as their candidate for an AFRL grant to fund the POET transition program and Phase III effort. Utilizing AFRL funding, the Company and BAE have entered into a transition program to jointly produce the POET platform and take it to production. Furthermore, BAE and other military prime contractors have expressed interest in using the POET platform in systems/subsystems for their Department of Defense customers. Additionally, a qualifier for receiving CPP funding is the acknowledgement of the firm’s willingness to commercialize a portion of the funded technology, thus providing commercial customers access to packaged parts, enabling the technology to be adopted for commercial and military systems. Commercial: The proliferation of consumer electronics has created a vast and growing market demand for semiconductor technology. Each new advance in this market requires smaller, denser and more efficient computing power, while maintaining efficient costs. To satisfy these demands, the capabilities of traditional semiconductors must be enhanced. The Company believes that POET has the potential to be a breakthrough technology.According to a report published by industry researcher IC Insights in 2014, the optoelectronics market is forecast to surpass the discrete semiconductor market and become the second largest segment in the semiconductor industry behind ICs. Another market researcher, BBC Research of Wellesley, Massachusetts recently published a report, “The Electronics and Components in Global Imaging Markets”, which stated that the global market for opto-electronic imaging sensors and components is expected to increase sharply over the coming years, including in applications such as automobile internal compartment monitoring, external accident sensors and camera applications. Marketing Plan: Military Segment: Our initial fundamental business strategy is to continue our directed focus on the military market through licensing arrangements with BAE and others and by pursuing projects which meet the POET platform product design goals of the transition process, which may lead to the subsequent volume production and license revenue generation. Our intent is also to foster prime contractor involvement that will lead to either a licensing or other form of partnership relationship based on long term demand for the POET platform, and to develop that demand into a potential partner’s strategic plans for meeting government requirements. Training, supporting and energizing the prime contractor sales teams will be a key ingredient to POET’s success in generating military and agency revenue. Commercial Segment: Our commercial sales and marketing activity will be based on direct contact with target corporations by senior management or industry consultants hired by the Company. Such contact will focus on developing successful relationships within the product areas. We know from our past experience in the solar industry that relationship leveraging is required to first gain entrance and then acceptance of a new company with new technology. Marketing and product development activity is expected to continue throughout the POET development and transition process in order to anticipate and adapt commercially directed devices, as well as commercial applications discovered going forward, during the development phase, thus offering well-designed, well-supported, market-focused products capitalizing on the potential advantages of POET. The release of test or prototype devices to both market segments for testing and acceptance of the POET process is important to the Company’s marketing plan. The availability of prototypes will be necessary to solicit early design wins with the potential to lead to volume production at such time as the Company can commence the POET transition. Currently, a prototype infrared sensor is in development for the AFRL which the Company believes, when completed, can be adapted for commercial prototype use. The Company believes that the most expedient way to scale its sales efforts in both the military and commercial market segments will be to work with and through the marketing, sales and engineering teams of those firms who are respected, proven product and solution providers, already holding a significant market share within their industry. Commercialization: The Company will focus first on the simplest products that can make its POET process stand out. To achieve this, the Company anticipates teaming with partners to produce and deliver POET driven devices into the military market segment in order to obtain high visibility quickly and to achieve the fast sales ramp-up in the commercial segment. First Phase; Initial Prototypes and Initial Production: Initial prototype devices meeting commercial requirements are anticipated to be produced in sufficient quantities during the POET transition program utilizing the BAE fabrication facility. Prototypes such as the infrared sensor now in development with BAE for military testing and use are targeted to be used to introduce the POET platform process to the marketplace and to enable the Company to gain access to potential customers and seek early commercial design wins. Having a third party manufacture infrared sensors will help serve to validate POET and should provide momentum to seek design wins. Second Phase: Production: The Company’s manufacturing model is to be fabless, meaning that we will partner with third party semiconductor fabrication facilities to produce the POET IC devices. As vertical market partnerships may be established, we anticipate those partnerships would seek to either utilize the BAE facility or another facility of their choosing to meet their volume fabrication needs, leveraging off of the prototypes expected to be manufactured at the BAE facility. To the extent that POET is successfully introduced and demand dictates, the Company intends to continue to improve on its ability to provide cost effective product by utilizing well known, commercial market-focused fabrication facilities worldwide. The manufactured cost of a POET component will include the cost of manufacturing the die, plus the cost of packaging the die. Depending upon the type of component manufactured, the physical dimensions of the die will vary, as will the packaging cost. Manufacturing: The Company has contracted with BAE for the transition phase of its POET platform development from the POET laboratory on the campus of the University of Connecticut. If successfully completed, the Company expects to partner with BAE for the continued and on-going manufacture of wafers to meet the Company’s initial production requirements. The Company does not currently have a manufacturing agreement in place with BAE, but would seek to establish such agreements upon a successful transition of the POET process to production capability. BAE’s III-V GaAs fabrication facility is ISO 9001/14001 certified, military specification certified and can produce radiation hard devices. BAE’s state of the art facility houses two 3” wafer diameter production lines and two 6” wafer diameter production lines within 14,000 sq. ft. and a wafer test area covering 16,000 sq. ft. The facility is vibration isolated and environmentally controlled for sub-micron device development and manufacture. We believe that there is substantial capacity available to us for implementation of our development and to-market plans, and that BAE would be receptive to making such capacity available to us. Currently, a staff of over 150 engineers is devoted to design and development with another 70 devoted to foundry operations and testing. Packaging: We do not expect to package the devices, but expect to subcontract the service, as is conventional in the industry. BAE does offer a packaging group and can serve as the Company’s initial provider of this service, although no such arrangement currently exists. Packaging of early components will use vertical optical fiber attachment, as do vertical-cavity surface-emitting laser components. POET expects to introduce a lower-cost packaging technology capitalizing on the in-plane emission and reception capability of POET that will be developed later. Packaging of a POET component will involve attaching one die to a package, and attaching the fibers. Since all elements of the design are incorporated on one die, there will be no electrical or optical connections to be made between die in the package. Thus the packaging cost of POET components should be less than the costs of competing multiple-component products. * * * * * * * * * * * * * * * * Monetization Paths: Market Leaders NRE: - Industry leaders in specific markets to buy exclusivity rights. - Lock in POET IP keeping their competition out from using POET IP. Direct Foundry NRE: - Paid by foundries for POET to transfer and enable their foundry with PET/POET flow. - Replaces R&D $$$ they would have spent on developing this capability in-house. Foundry Design KIT – Flow-through NRE Royalties: - Percentage of the POET foundry design kit revenue from foundries that develop libraries and specific design kits targeting the POET process that they will sell to their customers. Semiconductor Chip Sales Royalties: - Royalties on future semiconductor chip sale POET enabled from the foundry flow. Initial NRE revenues expected to start in 2015: - End customer NRE, Foundry NRE's, or a combination thereof. * * * * * * * * * * * * * * * * Profile of Professor Geoffrey W. Taylor: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/UniversityofConnecticut_zps7887bf94.png User image Department of Electrical & Computer Engineering: http://www.ee.uconn.edu/faculty.php?f_id=18 Office: ITE Building 459 Phone: (860) 486-2666 Email: gwt@engr.uconn.edu Blog of Dr. Geoffrey Taylor, Chief Scientist at POET Technologies Inc. http://insights.wired.com/profiles/blogs/is-silicon-dead-or-can-we-expect-more-from-moore-s-law#axzz2ajhs93GC Article written by Dr. Taylor about POET in Compound Semiconductor, starting on page 52: http://www.compoundsemiconductor.net/csc/adminpanel/uploads/magazine_images/june2014.pdf Education: B.Sc., Electrical Engineering, Queens University, Kingston, Ont., 1966 M.A.Sc., Electrical Engineering, Univ. of Toronto, Toronto, Ont., 1968 Ph.D., Electrical Engineering, Univ. of Toronto, Toronto, Ont., 1972 Research Interests: Background in the areas of materials, devices and circuits for microelectronics. Early work in material defects, MOS device modeling, and circuit performance of Si based VLSI technology. Interests in the device limitations, the circuit configurations and the systems problems associated with VLSI. Translation of Si inversion channel device concepts to III-V systems for optoelectronics. Development of FET and bipolar devices in heterostructure systems. Research on optoelectronic devices includes detectors, lasers, amplifiers, modulators and passive optical devices. Current interest is in the implementation of optoelectronic integrated circuits ?IC? that combines the functions of optical and electronic devices in a single chip, infrared imaging and THz detection. Applications are circuits and subsystems for optical interconnect, optical computing, optical signal processors, and RF analog photonic systems such as phased array radars and wireless communication systems. Particular emphasis on the development of optoelectronic switches for new circuit functions such as high speed AD and DA, VCO, PLL and logic blocks. Targeted applications are DWDM systems for metro access, photonic switching systems for packet switching and optoelectronic interfaces for high speed memories, processors and networks. Modeling of laser diodes, Vertical Cavity Lasers, intersubband absorption, photoluminescence. ultra high speed electronic devices, rare earth doped lasers, THz device physics. Memberships: Institute of Electrical and Electronics Engineers (IEEE) Optical Society of America (OSA) Lasers and Electro-Optics Society (LEOS) SPIE - The International Society for Optical Engineering Publications + Archival Technical Journal Publications: Research Article Yan Zhang and Geoff Taylor http://www.hindawi.com/journals/aoe/aip/930369/ Small-signal analysis of microring resonator modulators: http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-12-14913 More articles of G W Taylor: http://www.hindawi.com/40714905/ Search IEEE, 107 results for Dr "Taylor, G.W.": http://ieeexplore.ieee.org/search/searchresult.jsp?searchWithin%3Dp_Authors%3A.QT.Taylor%2C+G.W..QT.%26searchWithin%3Dp_Author_Ids%3A37277680800&sortType=desc_p_Publication_Year&pageNumber=1&resultAction=SORT * * * * * * * * * * * * * * * * Trademark & Patents awarded to Geoff W Taylor, POET Technologies Inc. & Uconn: image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/UConnprofessorGeoffreyTaylor_zps8cbf8975.jpg User image Patents awarded to OPEL, Inc: https://www.google.com/search?sa=N&hl=en&biw=1236&bih=590&tbm=pts&tbm=pts&q=inassignee:%22OPEL,+Inc.%22 List of Patents for OPEL /ODIS & Dr. Taylor & Uconn (2 Patents were sold after making this list): http://investorshub.advfn.com/boards/read_msg.aspx?message_id=74245127 Newest Patents: Fiber Optic Coupler Array: http://patentscope.wipo.int/search/en/detail.jsf?docId=WO2014093616&recNum=1&office=&queryString=%22Fiber+Optic+Coupler+Array%22&prevFilter=&sortOption=App+Date+Desc&maxRec=4 Optical closed loop microresonator and thyristor memory device: https://www.google.com/patents/EP2745154A1?cl=en&dq=geoff+taylor&ei=USXHU53HH9GSyASU-IK4Dw Thyristor Memory Cell Integrated Circuit: http://patents.justia.com/patent/20150138881 Imaging Cell Array Integrated Circuit: http://patents.justia.com/patent/20150069217 Trademarks: POET Trademark application filed Nov 26, 2014 (US Serial Number: 86465512): http://tsdr.uspto.gov/#caseNumber=86465512&caseType=SERIAL_NO&searchType=statusSearch POWERED BY POET - Serial Number: 86482717: http://trademarks.justia.com/864/82/powered-by-86482717.html POET - Serial Number: 86465512: https://trademarks.justia.com/owners/poet-technologies-inc-2959358/ * * * * * * * * * * * * * * * * image: http://i1072.photobucket.com/albums/w366/sevenOdouble/Stock%20related/POETProactiveBanner_zpsce2fdca8.png User image Company Info & News Releases: News Releases + All Archived Events dating back to 2005: http://www.poet-technologies.com/category/press-releases/ * * * * * * * * * * * * * * * * Third Party websites featuring POET Technologies Inc. POET Technologies Inc. website build by IWD: http://www.iwdcanada.com/news/3rs-rename-rebrand-and-relaunch-iwd-works-with-a-semiconductor-manufacturer-to-unveil-their-new-direction/ Website Data; poet-technologies.com: http://websiteoutlook.com./www.poet-technologies.com Job application for Semiconductor Process Engineer/Technician: https://www.ziprecruiter.com/jobs/poet-technologies-31c9aca1 POET Presentation by Dan DeSimone, Director Technology & Vice President, Product Development: http://vimeo.com/111059234 City Investors Circle - POET Technologies - London Feb 2015: http://www.poet-technologies.com/investor-relations/presentations/ Phoenix-IR advised POET Technologies (PTK) on its European corporate access in London: http://www.phoenix-ir.com/company/presentation.php POET Technologies: transforming the future of semiconductors: http://www.allaboutshipping.co.uk/2015/02/18/poet-technologies-transforming-the-future-of-semiconductors/ Moore's Law Has No End in Sight: http://www.eetimes.com/document.asp?doc_id=1323892&page_number=2 Will Gallium Arsenide finally be ready to take the handoff from silicon for improving chip performance?: http://nextbigfuture.com/2014/09/will-gallium-arsenide-finally-be-ready.html GaAs; The Logical Successor To CMOS: http://www.compoundsemiconductor.net/article/94567-gaas-the-logical-successor-to-cmos.html?utm_source=twitterfeed&utm_medium=twitter Interview POET Technologies Inc Disruptive Advances In Intel’s backyard): http://www.midasletter.com/2014/04/poet-technologies-inc-tsx-vptk-disruptive-advances-intels-nasdaqintc-back-yard/ APRIL 28 2014 Empire Club, Spirit of a Pioneer Series Featuring Dr. Geoff W. Taylor, Chief Scientist of POET Technologies Inc: http://www.empireclub.org/events/poet-technology/ UConn takes equity stake in Canadian startup: http://www.hartfordbusiness.com/article/20140310/PRINTEDITION/303079964/1043 POET Technologies says it has the world’s next great microchip: http://adrianbrijbassi.com/2013/07/30/poet-technologies-says-it-has-the-worlds-next-great-microchip/ Must-Have Stocks for the High-Tech Arms Race by Byron King: http://www.scribd.com/doc/162076340/MTA-TwoMustHaveStocks?secret_password=12ir7dscc526x8bl1ek9 POET Technologies propels forward with new wave of chip technology: http://www.proactiveinvestors.com/companies/news/47366/poet-technologies-propels-forward-with-new-wave-of-chip-technology-47366.html How to sell Silicon Valley on the death of silicon: http://www.theglobeandmail.com/report-on-business/small-business/sb-growth/the-challenge/how-to-sell-silicon-valley-on-the-death-of-silicon/article13093729/ The end of Moore’s law: Q&A with POET technologies’ Peter Copetti: http://memeburn.com/2013/07/the-end-of-moores-law-qa-with-opel-technologies-peter-copetti/ Breaking Moore's Law: How chipmakers are pushing PCs to blistering new levels (PTK is featured halfway through the article): http://www.pcworld.com/article/2033671/breaking-moores-law-how-chipmakers-are-pushing-pcs-to-blistering-new-levels.html Industry Perspective: Keeping Pace With Moore’s Law: http://www.datacenterjournal.com/it/industry-perspective-keeping-pace-moores-law/ Proven growth markets for Clean Technology companies: http://www.tmx.com/en/pdf/Cleantech_Sector_Sheet.pdf Analyst/Expert opinions about POET Technologie Inc: http://www.stockchase.com/company/view/2998/0/Poet-Technologies/PTK-X IBK Capital: http://www.ibkcapital.com/technology/overview/ German blog about POET Technologies Inc. by Rainer Klute: https://rainerklute.wordpress.com/category/poet-technologies/ POET Technologies Facebook group: https://www.facebook.com/groups/poet.technologies/ * * * * * * * * * * * * * * * * POET in a nutshell: - Revolutionary POET Platform over 20 years in development. - Developed by Dr Geoffrey Taylor at the University of Connecticut. - POET Technologies Inc.has 34 Patents & 7 pending. - Company has received over $5 Mil in Government funding since inception. - IBK Capital has funded the Company for more than $40 Million since inception. - POET Technologies Inc. received an oversubscribed PP $5 mil in Feb '14 2014. - Company has enough working capital for the next 12 months. - Received many SBIR grants from US Navy, US Air Force, US Missile Defence Agency & NASA. - Working with BAE Systems, one of the biggest military contractor' in the world. - The company recently collaborated with Synopsys & transferred the technology to a 3rd party Foundry. - POET Technologies Inc. is up-to-date on all reports since inception. - No questionable characters involved. - No lawsuits. - No toxic financing. - No Preferred shares. - Monetization is near, licenses, PDA's & Joint Ventures, spin offs, & a partial or total buyout of the revolutionary POET Platform. * * * * * * * * * * * * * * * * "Disclaimer" I hold shares in PTK.V (Long Term). I'm not compensated in any way for making this DD Collection! The Due Diligence report I compiled must serve only for informational purposes, I am not an Investment Advisor, nor qualified in technical matters like the POET Technology. This is not an offer to buy or sell securities in POET Technologies Inc. I made this Due Diligence report in the first place for myself to have all the available information of this company in one spot, and then decided to share this publicly so other people could use it, at their own will & risk. Please contact your Financial Advisor, Counsel or Lawyer before even contemplating buying securities. Also, read all the available information on the homepage and the websites of SEDAR, SEDI, SEC etc. Investing can be very risky, there are no guarantees! You have to take into consideration that you can lose all your money before you decide to take a position in this stock, or any other! 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