Patents by Inventor Suresh Venkatesan

Application number: 20040012037

Abstract: High quality gallium arsenide (GaAs) (38) is grown over a thin germanium layer (26) and co-exists with silicon (40) for hetero-integration of devices. A bonded germanium wafer of silicon (22), oxide (24), and germanium (26) is formed and capped (30). The cap (30) and germanium layer (26) are partially removed so as to expose a silicon region (32) and leave a stack (31) of oxide, germanium, and capping layer on the silicon. Selective silicon is grown over the exposed silicon region. Silicon devices (36) are made in the selectively grown region of silicon (34). The remaining capping layer (30) is etched away to expose the thin layer of germanium (26). GaAs (38) is grown on the thin germanium layer (26), and GaAs devices (29) are built which can interoperate with the silicon devices (36). Alternatively, a smaller portion of the remaining cap (30) can be removed and germanium or silicon-germanium can be selectively grown on the exposed germanium (214) in order to form germanium or silicon-germanium devices (216).

Type: Application

Filed: July 18, 2002

Issued: January 22, 2004

Assignee: MOTOROLA, INC.

Inventors: Suresh Venkatesan, Papu D. Maniar