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Intel GaN for low-power SoCs + IBM InGaAs CMOS processes

posted on May 11, 2015 02:59PM

VLSI Symposia delve into future process choices

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Looking further into the future, Intel will describe the use of gallium nitride for low-power SoCs rather than in high-power transistors and RF amplifiers where the material is used today. The company has developed a 90nm enhancement-mode MOS-HEMT hybrid – in contrast to the mostly depletion-mode devices currently encountered in high-energy applications - that could be applied to on-chip voltage regulators and RF circuits and open up more possibilities for local power conversion.

IMAGE Cross-sections of the Intel 14nm logic and I/O finFET transistors

The transistors exhibit 3.6x lower on-resistance than silicon transistors intended for voltage regulators at an equivalent breakdown voltage. For RF, Intel claims the transistor structure offers higher RF power output at matched power-added efficiency than existing GaAs RF amplifiers.

For attempts to merge III-V materials with conventional logic, IBM and EMPA will describe work to bring indium gallium arsenide (InGaAs) into large-wafer CMOS processes suitable for high-volume production. The technique, which places the active InGaAs devices on insulator has been used to build gate-first, self-aligned finFETs with a 100nm-long gate and 50nm-wide fins.