Considering the ysu.edu page, I feel that the strict definition of wide band gap semiconductors as being any semi above 2eV refers to uses with current technology, and does not exclude POET even in GaAs, which is has a bandgap of 1.4eV. POET has all the qualities that WBG technologies have, as per the White House release.

While GaN may have a wider band gap, it has a very low electron mobility and hole mobility.

www.phy.ohiou.edu/~hla/GaN-1.ppt

As many here know, the secret sauce of PET is that Taylor managed to overcome the inherent low p-channel in GaAs which is due to the low hole mobility of GaAs. There may be ways of doing the same in GaN (there will have to be, otherwise GaN would never work as a CMOS replacement). In any case, GaAs is preferable to GaN in terms of carrier mobility.

But this is probably irrelevant anyway.

GaAs was lumped in with Si because of the need for cooling equipment to run efficiently. We've been told that POET will be ideal in uncooled IR detectors. Clearly POET uses GaAs in a way that negates the thermal barriers. POET uses such a small amount of power, I don't think heat is an issue.

To prove the point, have a look at this accomplishment:

http://www.afsbirsttr.com/Include/Report/SummaryReport.aspx?pk=B87DCBB3-6910-4774-AE41-3EF24F72D4EC&type=TechMall

This SBIR effort tells a great story. Notice that it predicts increased density compared with CMOS, and a reduction in the capacitance through the use of waveguides and optical transmission. This alone should lead to a massive reduction in waste heat, not to mention the fact that POET requires much less voltage in the first place!

Remember: POET is valuable because

(1) it's faster and cooler than Si CMOS;

(2) it can combine expensive chips to save money overall;

(3) it is at the beginning of it's scaling potential; and

(4) it offers devices that are not currently available in CMOS (e.g., Thyristor) offering the potential for products that could never be devised any other way.

This is not an exhaustive list, but it's enough to suggest that we will soon be renowned amongst those who wish to rebuild US prominence (dominance?) in technology.