Action,

I think you are right about the indium. PTK is trying to maximize the amount of indium in the n-type transistors in order to increase the electron mobility and thus increase performance. Here is a clip from another NR:

On March 4th, PTK's NR:

In association with this, POET is upgrading its molecular beam epitaxy (MBE) system to make critical additions and replenish source materials. One critical addition is a high-volume indium (In) source to enable metamorphic growth on a gallium arsenide (GaAs) substrate of the POET epitaxy with a natural wavelength of 1550-nm. This is expected to enable the production of long-wavelength lasers combined with high In-content field-effect transistor (FET) channels for superior high-speed transistor performance.

Based on the above statement it looks like indium has an application for the optical lasers as well. (not just PET). It does make sense to use indium because of its high electron mobility for PET.

I bet they are trying to use Ge in the p type transistors because in the EE Times article they quote the maximim possible speed as 1900 (hole mobility) which perfectly matches the hole mobilty of Ge.

I hope all this is just minor tweeking and not major research. In my opinion they have done it in the lab and are happy with it and now need to reproduce or optimize in the fab. I can't wait for that NR when the Fab can mass produce Poet chips! I just remind myself BAE has done it in their fab so why not a commercial fab? Just a matter of time. hard to wait though.