Here is why I think we see some incoherent statements on the speed gain and power consumption of the Poet breakthrough (not just because the Pet/Poet matters).

From Compound Semiconductor Magazine :

''By turning to strained InGaAs quantum well with indium channels of 70 percent or more, mobility and channel velovity increase, and operation of the cricuit at 0,3V should enable a ten-fold gain in performance at 80 percent lower power compared to a silicon CMOS IC.

From Eetimes article :

''The channels of POET's transistors are InGaAs, which theoretically could reach 40,000 cm2/ (V·s) if the gallium was reduced to zero (pure bulk InAs). That however is not achievable, according to POET, although it is getting as close as it can. Thus far channels of 53% indium have been achieved and the company believes that 80% indium is ultimately possible. ''

I would love to have your thoughts on this.