I am confused!

Now it is obvious that when Poet says GaAs is 3 and 4 nodes ahead of Silicon it means at the same node size.

So 40nm in GaAs is same speed like 14nm in Si and same power as 10nm in Si.

P channel hole mobility is not much more than in Si.

So what is expected speed and power at 100nm in GaAs?

Is it going to be like 40nm in Si?

This article is confusing and it is not confirming what we have heard from Poet.

I used to believe that GaAs at 100nm was 20 to 50× faster than current 20nm Si.

Now i am not so sure anymore!

Please someone clarify this to me!?

Still Poet is only company claiming optical integration on chip.

Good luck!

Djordje