Mackwheaton: You simply do not make that commitment to 40nm unless it is a given that you will succeed. To do so would be disastrous, and I am sure the scientist that is Taylor, in spite of his exuberance, would not have agreed to this unless he was certain that it would be achieved.

Well said, Mackwheaton! The news release does not leave the shadow of a doubt that the 40 nm target will be achieved, aside from the usual "if you haven't done it yet, you haven't done it yet."

Reaching 40 nm is only a matter of the superiour lithography tools and other equipment in the foundry. This is very different from the 100 nm target where new procedures had to be developed and POET entered some uncharted territory.

40 nm gallium arsenide will put silicon into serious trouble performancewise, let alone regarding power consumption, digital/analog integration as well as the future full electro/optical integration.