After reading that article I then saw this one, that is interesting as well......

http://www.compoundsemiconductor.net/article/94938-us-researchers-show-new-way-of-growing-iii-v-layers-on-si.html

.....it included this information.....

A few experimental investigations have already been reported on the growth of GaAs nanowires on Si using graphene. Nanowire on graphene, according to the researchers, is technologically easier to realise than smooth GaAs on graphene.

Nevertheless, successful operation of nanowire-based devices is impeded by carrier loss mechanisms, surface-state induced band bending, Fermi level pinning, poor ohmic contacts, and uncontrolled incorporation of n- and p-type dopants. These issues result in poor optoelectronic performance.

In effect, nanowire-based devices have still not turned out to be an alternative to its counterpart, smooth thin-film based devices.

.....so, US Researchers are showing a new way, but the results aren't good.......am I reading that correctly?