As far as I know we don't have any independent evidence yet that would qualify for changing that Wikipedia entry. Okay, we have the POET validation done by BAE Systems, but there's no direct reference to hole mobility.

Re-reading Dr. Taylor's article "GaAs: The logical successor to CMOS", I notice passages like these (emphasis by me):

• "Against this backdrop, POET Technologies of Toronto, ON, and Storrs, CT, is pioneering a new approach that leads to superior ICs: Planar OptoElectronic Technology (POET). This revolutionary CMOS-friendly process IP, which enables p-channel and n-channel devices to be integrated monolithically in a III/V semiconductor environment, has the potential to fully replace all silicon-based CMOS circuitry."
• "With our technology, the incompatibility issue between transistors and the optical devices disappears, and it is possible to form high mobility channels for both the n-type and p-type transistors. But to do this, we have to challenge the assumption that these high-mobility materials have to be introduced on a silicon substrate."

Since POET Technology is pioneering this work, I doubt there's enough evidence yet which would qualify for Wikipedia. If the worst comes to the worst we might have to wait until the first POET chips with fast p-channel transistors emanate from a pioneering fab.