Aiming to become the global leader in chip-scale photonic solutions by deploying Optical Interposer technology to enable the seamless integration of electronics and photonics for a broad range of vertical market applications

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Message: Re: 100 nm GaAs = 10nm Silcon ?
9
Aug 13, 2014 09:51AM
7
Aug 13, 2014 10:16AM

From web site

  • Up to 100x speed improvement over CMOS silicon (silicon hits a “power wall” at about 4 GHz that has limited circuit speeds to about 3.2 GHz over the last 10 years)
  • 10-100x power efficiency improvement over CMOS silicon (depending on application)
  • Flexible application that can be applied to virtually any technical application, including memory, digital/mobile, sensor/laser and electro-optical, among many others
  • No retrofit or other modifications to existing silicon fabs required – Since POET/PET are CMOS technologies fabricated using standard lithography techniques; they are easily integrated into current semiconductor production facilities extending the profitable utilization of fabrication equipment and production lines that would otherwise be considered at the end of life.
9
Aug 13, 2014 12:49PM
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Aug 13, 2014 02:24PM
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