On March 4th, PTK's NR made the following statement:

In association with this, POET is upgrading its molecular beam epitaxy (MBE) system to make critical additions and replenish source materials. One critical addition is a high-volume indium (In) source to enable metamorphic growth on a gallium arsenide (GaAs) substrate of the POET epitaxy with a natural wavelength of 1550-nm. This is expected to enable the production of long-wavelength lasers combined with high In-content field-effect transistor (FET) channels for superior high-speed transistor performance.

I find the addition of Indium to the "secret sauce" interesting.(I am not sure if this is new or not?) As previously posted here on electron mobility:

Si- 1400 (I have omitted the units)

GaAs- 8500 (varies depending on the source)

InAs- 30,000 to 40,000!!!

It would be pretty cool if PET is adding Indium to tap into that 40,000 electron mobility (28 times faster than silicon)

Food for thought.