Clearly this DRAM has significant advantages which are:

same speed as the SRAM operation.

selective operation of the cell as an SRAM cell or DRAM cell can be controlled by simply disabling the refresh cycle and the store voltage.

the NV backup operation can also be used here as well.

extremely low power operation is possible.

extremely high density is possible.

complex sense amplifiers are not required; the thyristor action is its own sense amplifier and provides a digital output signal on the respective bit line.

not limited by stored charge as in conventional DRAM; the thyristor is an active device which can supply current instead of charge—active read.

The advantages of the thyristor memory cell of the present application are summarized in FIG. 7.