NEWS RELEASE

OPEL Technologies Inc. Achieves Integrated Circuit Milestone

via Proprietary POET Platform

Storrs, CT, and Toronto, ON, June 27, 2013 – OPEL Technologies Inc. (TSX-V: OPL, OTC: OPELF)

(“OPEL” or “the Company”) announces that it has achieved Milestone 6 in its development roadmap of the

proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated

electronic and optical devices on a single semiconductor wafer, a next-generation alternative to silicon

complementary metal-oxide semiconductor (CMOS) technology..

The new milestone is the integration of the complementary inverter, the basis for all on-chip logic. Specifically,

OPEL successfully demonstrated complementary heterostructure field effect transistor (HFET) based inverter

operation using the POET process.

Mr. Peter Copetti, Executive Director of OPEL, and Chair of the Special Strategic Committee (SSC) for

commercialization of the POET platform, noted: “The SSC deemed Milestone 6 to be critical for our

commercialization activities, and staff focused on this milestone. That we achieved Milestone 6 so quickly

spotlights the caliber of the POET team, and our ability to execute and to pivot to industry needs.”

Mr. Copetti added: “Due to ongoing needs of the SSC, other pre-determined milestones and dates may have to

change without notice – but any changes will be consistent with our commercialization mandate.”

The achievement of Milestone 6 obviates the need for Milestone 5 (3/4 terminal switching laser, Q2-2013).

Milestone 6 was originally scheduled for Q3-2013, and its achievement in Q2 puts OPEL ahead of its targeted

development milestones.

“To serve the digital marketplace currently dominated by CMOS, complementary functions in GaAs/InGaAs

are essential,” said Dr. Geoffrey Taylor, Chief Scientist. “With this milestone, this functionality has been

demonstrated on a POET device.”

The OPEL lab demonstrated both nHFETs and pHFETs, with symmetrical positive thresholds, as an integrated

circuit with thresholds of +/- 0.5V and VD=2V for 1um gates. Going forward, logic circuits will be integrated

with in-plane lasers and detectors with the goal of reducing linewidths towards CMOS state-of-art circuits.

Coupled with achievement of its previous milestones – including demonstration of the vertical cavity laser –

POET extends the capability of its unique monolithic platform.

Mr. Leon Pierhal, President and Chief Executive Office of OPEL, added: “We are extremely proud of this

achievement. This further underlines the capacity that POET has to be a disruptive technology, able to address

current and future challenges facing the semiconductor industry, and provides the SSC with further momentum

for its initiatives.”

By enabling increased speed, density, reliability, power efficiency, and much lower bill-of-materials and

assembly costs, POET provides a new technology direction and opportunity for the semiconductor industry.

POET will allow continued advances of semiconductor device performance and capabilities for many years,

overcoming the current power and speed bottlenecks of silicon-based circuits, and will change the future

development roadmaps of a broad range of semiconductor applications including mobile and wearable devices,

computer servers, storage arrays, imaging equipment, and networking equipment.